EP 2617871 A4 20171025 - DISCHARGE SURFACE TREATMENT METHOD
Title (en)
DISCHARGE SURFACE TREATMENT METHOD
Title (de)
VERFAHREN ZUR BEARBEITUNG EINER STROMENTLADUNGSOBERFLÄCHE
Title (fr)
PROCÉDÉ DE TRAITEMENT DE SURFACE PAR DÉCHARGE
Publication
Application
Priority
JP 2010005652 W 20100916
Abstract (en)
[origin: EP2617871A1] There is an electrical discharge surface treatment method of forming a surface layer on a work piece surface by making pulsed electrical discharge repeatedly occur between a work piece (2) and an electrode (1) for electrical discharge surface treatment, for which a compact formed by powder obtained by mixing 20 wt% or more of silicon with powder of a hard material or a solid body of silicon is used, so that the electrode material is moved to the work piece (2), including: a processing time decision step of observing an electrical discharge treatment surface formed on the work piece surface by the electrical discharge and deciding the electrical discharge surface treatment end time in a process where surface roughness formed by the electrical discharge on the electrical discharge treatment surface acquired from the observation result is increased and is then decreased. Electrical discharge surface treatment between the electrode and the work piece is executed for only the processing time set in the processing time decision step.
IPC 8 full level
C23C 26/00 (2006.01); C23C 26/02 (2006.01)
CPC (source: EP US)
C23C 26/00 (2013.01 - EP US); C23C 26/02 (2013.01 - EP US); H01B 13/00 (2013.01 - US)
Citation (search report)
- [A] US 5091620 A 19920225 - MOHRI NAOTAKE [JP], et al
- [A] US 4623772 A 19861118 - FERY PHILIPPE [CH], et al
- [A] US 4948625 A 19900814 - SUZUKI MASAHIKO [JP], et al
- [A] US 5698114 A 19971216 - MAGARA TAKUJI [JP], et al
- [A] US 5751589 A 19980512 - SATO TATSUSHI [JP], et al
- See references of WO 2012035580A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
EP 2617871 A1 20130724; EP 2617871 A4 20171025; CN 102523747 A 20120627; CN 102523747 B 20140507; JP 4900539 B1 20120321; JP WO2012035580 A1 20140120; US 2013209705 A1 20130815; WO 2012035580 A1 20120322
DOCDB simple family (application)
EP 10836818 A 20100916; CN 201080003647 A 20100916; JP 2010005652 W 20100916; JP 2011527106 A 20100916; US 201013140604 A 20100916