EP 2625015 A2 20130814 - METHOD FOR PRODUCING A SILICONE FOIL, SILICONE FOIL AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT COMPRISING A SILICONE FOIL
Title (en)
METHOD FOR PRODUCING A SILICONE FOIL, SILICONE FOIL AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT COMPRISING A SILICONE FOIL
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER SILIKONFOLIE, SILIKONFOLIE UND OPTOELEKTRONISCHES HALBLEITERBAUTEIL MIT EINER SILIKONFOLIE
Title (fr)
PROCÉDÉ DE FABRICATION D'UN FILM EN SILICONE, FILM EN SILICONE ET COMPOSANT SEMI-CONDUCTEUR OPTOÉLECTRONIQUE MUNI D'UN FILM EN SILICONE
Publication
Application
Priority
- DE 102010047454 A 20101004
- EP 2011064174 W 20110817
Abstract (en)
[origin: WO2012045511A2] In at least one embodiment of the method, the latter serves for producing a silicone foil (2) by means of molding for use in an optoelectronic semiconductor component (10). The method comprises the following steps: introducing a mold foil (1) into a mold (5), introducing a carrier foil (3) into the mold (5), wherein the carrier foil (3) is fitted on a substrate foil (4) and the substrate foil (4) projects laterally beyond the carrier foil (3), providing and applying a silicone base composition (20) to the mold foil (1) or to the carrier foil (3), molding the silicone base composition (20) to form the silicone foil (2) between the mold foil (1) and the carrier foil (3), wherein the silicone base composition is brought into contact with the substrate foil (4) in an overlap region (24) laterally alongside the carrier foil (3), removing the mold foil (1) from the silicone foil (2), and separating the overlap region (24).
IPC 8 full level
B29C 43/18 (2006.01); B29C 43/20 (2006.01); B29C 43/40 (2006.01); B29C 69/00 (2006.01); H01L 33/52 (2010.01)
CPC (source: EP KR US)
B29C 43/18 (2013.01 - EP KR US); B29C 43/20 (2013.01 - KR); B29C 43/206 (2013.01 - EP US); B29C 43/40 (2013.01 - EP KR US); B29C 67/24 (2013.01 - US); B29C 69/00 (2013.01 - KR); B29C 69/001 (2013.01 - EP US); H01L 33/44 (2013.01 - EP US); H01L 33/48 (2013.01 - US); B29C 43/021 (2013.01 - EP US); B29L 2011/0016 (2013.01 - EP US); H01L 2933/0025 (2013.01 - EP US); Y10T 428/24355 (2015.01 - EP US); Y10T 428/24372 (2015.01 - EP US)
Citation (search report)
See references of WO 2012045511A2
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
DE 102010047454 A1 20120405; CN 103153570 A 20130612; EP 2625015 A2 20130814; JP 2013545279 A 20131219; JP 5604008 B2 20141008; KR 20130061744 A 20130611; US 2013228799 A1 20130905; WO 2012045511 A2 20120412; WO 2012045511 A3 20120607
DOCDB simple family (application)
DE 102010047454 A 20101004; CN 201180048532 A 20110817; EP 11760715 A 20110817; EP 2011064174 W 20110817; JP 2013532089 A 20110817; KR 20137009606 A 20110817; US 201113877270 A 20110817