EP 2628172 A1 20130821 - FIELD-EFFECT TRANSISTOR ON A SELF-ASSEMBLED SEMICONDUCTOR WELL
Title (en)
FIELD-EFFECT TRANSISTOR ON A SELF-ASSEMBLED SEMICONDUCTOR WELL
Title (de)
FELDEFFEKTTRANSISTOR AUF EINER SELBSTANGEORDNETEN HALBLEITERKAVITÄT
Title (fr)
TRANSISTOR A EFFET DE CHAMP SUR ILOT DE MATERIAU SEMICONDUCTEUR AUTO-ASSEMBLE
Publication
Application
Priority
- FR 1058246 A 20101011
- EP 2011067504 W 20111006
Abstract (en)
[origin: WO2012049071A1] The invention relates to a device comprising at least one transistor produced on a substrate (1) made of a first semiconductor, each transistor (20, 20) comprising: a gate electrode (5), called the gate; two conductive electrodes (3, 4); a well (2), made of a second semiconductor, embedded in the substrate (1) and defining a region able to form a channel, called the channel region; and an insulating region (6) separating the gate (5) from the two electrodes (3, 4) and from the channel region, characterized in that the channel region lies inside the well (2) and makes direct electrical contact with at least one of the two conductive electrodes (3, 4).
IPC 8 full level
H01L 29/66 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01)
CPC (source: EP KR US)
H01L 21/84 (2013.01 - EP KR US); H01L 27/1203 (2013.01 - KR US); H01L 29/41733 (2013.01 - EP KR US); H01L 29/42384 (2013.01 - EP KR US); H01L 29/45 (2013.01 - EP KR US); H01L 29/458 (2013.01 - EP US); H01L 29/66643 (2013.01 - KR US); H01L 29/66742 (2013.01 - EP KR US); H01L 29/7839 (2013.01 - KR US); H01L 29/78681 (2013.01 - EP KR US); H01L 29/78687 (2013.01 - EP KR US)
Citation (search report)
See references of WO 2012049071A1
Citation (examination)
- US 2001045582 A1 20011129 - SCHMIDT OLIVER G [DE], et al
- US 2005106790 A1 20050519 - CHENG KANGGUO [US], et al
- US 6515335 B1 20030204 - CHRISTIANSEN SILKE H [DE], et al
- US 2007187758 A1 20070816 - JUN MYUNG S [KR], et al
- US 5159416 A 19921027 - KUDOH OSAMU [JP]
- US 2009236595 A1 20090924 - ATANACKOVIC PETAR B [US]
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
FR 2965975 A1 20120413; FR 2965975 B1 20121221; CN 103262224 A 20130821; EP 2628172 A1 20130821; JP 2013543264 A 20131128; KR 20130101075 A 20130912; US 2013193484 A1 20130801; WO 2012049071 A1 20120419
DOCDB simple family (application)
FR 1058246 A 20101011; CN 201180059718 A 20111006; EP 11769841 A 20111006; EP 2011067504 W 20111006; JP 2013532211 A 20111006; KR 20137011414 A 20111006; US 201113878501 A 20111006