EP 2628191 A1 20130821 - METHOD FOR PRODUCING A SEMICONDUCTOR LAYER SEQUENCE, RADIATION-EMITTING SEMICONDUCTOR CHIP, AN OPTOELECTRONIC COMPONENT
Title (en)
METHOD FOR PRODUCING A SEMICONDUCTOR LAYER SEQUENCE, RADIATION-EMITTING SEMICONDUCTOR CHIP, AN OPTOELECTRONIC COMPONENT
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER HALBLEITERSCHICHTENFOLGE, STRAHLUNGSEMITTIERENDER HALBLEITERCHIP UND OPTOELEKTRONISCHES BAUTEIL
Title (fr)
PROCÉDÉ DE FABRICATION D'UNE SUCCESSION DE COUCHES SEMI-CONDUCTRICES, PUCE DE SEMI-CONDUCTEUR ÉMETTANT UN RAYONNEMENT, ET COMPOSANT OPTOÉLECTRONIQUE
Publication
Application
Priority
- DE 102010048617 A 20101015
- EP 2011067154 W 20110930
Abstract (en)
[origin: WO2012049031A1] The invention relates to a method for producing a semiconductor layer sequence, which is based on a nitride compound semiconductor material and which comprises a microstructured outer surface, to a semiconductor chip produced using said method, and to an optoelectronic component comprising such a semiconductor chip. The method has the following steps: A) growing at least one first semiconductor layer of the semiconductor layer sequence on a substrate; B) applying an etch-resistant layer on the first semiconductor layer; C) growing at least one further semiconductor layer on the layer sequence obtained in step B); D) separating the semiconductor layer sequence from the substrate, a separating zone of the semiconductor layer sequence being at least partly removed; E) etching the obtained separating surface of the semiconductor layer sequence by means of an etching means such that a microstructuring of the first semiconductor layer is carried out and the microstructured outer surface is formed.
IPC 8 full level
H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/22 (2010.01)
CPC (source: EP KR US)
H01L 33/00 (2013.01 - KR); H01L 33/0093 (2020.05 - EP US); H01L 33/16 (2013.01 - KR); H01L 33/22 (2013.01 - EP KR US); H01L 33/24 (2013.01 - US); H01L 33/007 (2013.01 - EP US); H01L 33/16 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)
Citation (search report)
See references of WO 2012049031A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
DE 102010048617 A1 20120419; CN 103155180 A 20130612; CN 103155180 B 20160622; EP 2628191 A1 20130821; JP 2013543265 A 20131128; KR 20130061182 A 20130610; TW 201234421 A 20120816; US 2013264598 A1 20131010; US 9337388 B2 20160510; WO 2012049031 A1 20120419
DOCDB simple family (application)
DE 102010048617 A 20101015; CN 201180049670 A 20110930; EP 11763943 A 20110930; EP 2011067154 W 20110930; JP 2013533146 A 20110930; KR 20137010332 A 20110930; TW 100137083 A 20111013; US 201113878212 A 20110930