EP 2636075 A1 20130911 - III-NITRIDE LAYER GROWN ON A SUBSTRATE
Title (en)
III-NITRIDE LAYER GROWN ON A SUBSTRATE
Title (de)
AUF EINEM SUBSTRAT GEZÜCHTETE III-NITRIDSCHICHT
Title (fr)
COUCHE DE NITRURE DU GROUPE III DE CROISSANCE SUR UN SUBSTRAT
Publication
Application
Priority
- US 40914910 P 20101102
- IB 2011054755 W 20111025
Abstract (en)
[origin: WO2012059843A1] In a method according to embodiments of the invention, a Ill-nitride layer is grown on a substrate. The substrate is RA03(MO)n, where R is selected from Sc, In, Y, and the lanthanides; A is selected from Fe (III), Ga, and A1; M is selected from Mg, Mn, Fe (II), Co, Cu, Zn and Cd; and n is an integer = 1. In some embodiments, [(|asubstrate - alayer|)/asubstrate]* 100% is no more than 1%, where asubstrate is an in-plane lattice constant of the substrate and alayer is a bulk lattice constant of the III -nitride layer. In another method according to embodiments of the invention, a Ill-nitride layer is grown on a substrate. The substrate is a non-III-nitride material. The Ill-nitride layer is a ternary, quaternary, or quinary alloy. The Ill-nitride layer is thick enough to be mechanically self-supporting and has a low defect density.
IPC 8 full level
H01L 33/00 (2010.01); C30B 25/18 (2006.01); H01L 21/02 (2006.01)
CPC (source: EP KR)
C30B 25/18 (2013.01 - EP); C30B 29/406 (2013.01 - EP); H01L 21/0237 (2013.01 - EP); H01L 21/0242 (2013.01 - EP); H01L 21/02433 (2013.01 - EP); H01L 21/02458 (2013.01 - EP); H01L 21/0254 (2013.01 - EP); H01L 21/02664 (2013.01 - EP); H01L 33/007 (2013.01 - EP); H01L 33/02 (2013.01 - KR); H01L 33/0093 (2020.05 - EP); H01L 2924/0002 (2013.01 - EP)
Citation (search report)
See references of WO 2012059843A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2012059843 A1 20120510; CN 103180971 A 20130626; EP 2636075 A1 20130911; JP 2014500842 A 20140116; KR 20130112903 A 20131014
DOCDB simple family (application)
IB 2011054755 W 20111025; CN 201180052858 A 20111025; EP 11781869 A 20111025; JP 2013535559 A 20111025; KR 20137014126 A 20111025