EP 2636110 A1 20130911 - VERTICALLY-COUPLED SURFACE-ETCHED GRATING DFB LASER
Title (en)
VERTICALLY-COUPLED SURFACE-ETCHED GRATING DFB LASER
Title (de)
VERTIKAL GEKOPPELTER OBERFLÄCHENGEÄTZTER DFB-GITTERLASER
Title (fr)
LASER DFB À RÉSEAU GRAVÉ EN SURFACE À COUPLAGE VERTICAL
Publication
Application
Priority
CA 2010001737 W 20101102
Abstract (en)
[origin: WO2012058742A1] A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi- functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined / etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.
IPC 8 full level
H01S 5/12 (2006.01); H01L 33/00 (2010.01)
CPC (source: EP)
H01S 5/1231 (2013.01); H01S 5/1237 (2013.01); H01S 5/2045 (2013.01); H01S 5/22 (2013.01); H01S 5/2232 (2013.01); H01S 5/0208 (2013.01); H01S 5/0422 (2013.01); H01S 5/2018 (2013.01); H01S 5/2081 (2013.01)
Citation (search report)
See references of WO 2012058742A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2012058742 A1 20120510; CN 103460527 A 20131218; EP 2636110 A1 20130911
DOCDB simple family (application)
CA 2010001737 W 20101102; CN 201080070812 A 20101102; EP 10859123 A 20101102