EP 2643859 A1 20131002 - METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND SUCH A SEMICONDUCTOR CHIP
Title (en)
METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND SUCH A SEMICONDUCTOR CHIP
Title (de)
VERFAHREN ZUM HERSTELLEN EINES OPTOELEKTRONISCHEN HALBLEITERCHIPS UND DERARTIGER HALBLEITERCHIP
Title (fr)
PROCÉDÉ DE PRODUCTION D'UNE PUCE SEMICONDUCTRICE OPTOÉLECTRONIQUE ET CETTE PUCE SEMICONDUCTRICE
Publication
Application
Priority
- DE 102010052727 A 20101126
- EP 2011068476 W 20111021
Abstract (en)
[origin: WO2012069262A1] The invention relates to a method for producing an optoelectronic semiconductor chip (10) with a semiconductor layer stack (1) based on the material system AlInGaP. A growth substrate (2) is provided that has a silicon surface. A compressively relaxed buffer layer stack (3) is applied on the growth substrate (2). The semiconductor layer stack (1) is grown on the buffer layer stack (3) in a metamorphic epitaxial manner. The semiconductor layer stack (1) has an active layer that is provided for generating radiation. The invention further relates to a semiconductor chip (10) produced by means of such a method.
IPC 8 full level
H01L 33/00 (2010.01); H01S 5/02 (2006.01); H01S 5/323 (2006.01); H01S 5/343 (2006.01)
CPC (source: EP KR US)
H01L 21/02381 (2013.01 - EP US); H01L 21/02461 (2013.01 - EP US); H01L 21/02463 (2013.01 - EP US); H01L 21/02505 (2013.01 - EP US); H01L 21/02543 (2013.01 - EP US); H01L 21/20 (2013.01 - KR); H01L 33/00 (2013.01 - KR); H01L 33/0066 (2013.01 - EP US); H01L 33/12 (2013.01 - KR); H01L 33/26 (2013.01 - US); H01S 5/02 (2013.01 - KR); H01L 33/0093 (2020.05 - EP US); H01L 33/12 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US); H01L 2933/0091 (2013.01 - EP US); H01S 5/3201 (2013.01 - EP US); H01S 2301/173 (2013.01 - EP US)
Citation (search report)
See references of WO 2012069262A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
DE 102010052727 A1 20120531; DE 102010052727 B4 20190131; CN 103222072 A 20130724; CN 103222072 B 20160608; EP 2643859 A1 20131002; JP 2013545312 A 20131219; KR 101470780 B1 20141208; KR 20130098407 A 20130904; TW 201232817 A 20120801; TW I523264 B 20160221; US 2013328101 A1 20131212; US 9093604 B2 20150728; WO 2012069262 A1 20120531
DOCDB simple family (application)
DE 102010052727 A 20101126; CN 201180056609 A 20111021; EP 11773460 A 20111021; EP 2011068476 W 20111021; JP 2013540282 A 20111021; KR 20137015964 A 20111021; TW 100139073 A 20111027; US 201113883782 A 20111021