Global Patent Index - EP 2654076 A2

EP 2654076 A2 20131023 - Method of dicing a substrate

Title (en)

Method of dicing a substrate

Title (de)

Verfahren zum Zerteilen eines Substrats

Title (fr)

Procédé de découpage d'un substrat

Publication

EP 2654076 A2 20131023 (EN)

Application

EP 13163836 A 20130416

Priority

JP 2012093856 A 20120417

Abstract (en)

In a step of performing dicing by sticking a protective tape (2) for protecting a wafer surface, in order to obtain a dicing method which ensures that there is no paste residue on a chip side face and that the protective tape is prevented from peeling from the wafer (1) during the dicing and which is excellent in productivity, in a step of performing dicing by sticking a surface protective adhesive tape having an energy ray-curable adhesive layer on one surface of a substrate, thereby performing surface protection for the surface of the semiconductor wafer where an integrated circuit is to be formed, the energy ray-curable adhesive layer is cured by radiating energy rays (4) beforehand to an inner circumferential portion of the wafer, and dicing is performed, with the energy ray-curable adhesive layer kept in an uncured condition by ensuring that energy rays are not radiated to an outer peripheral portion.

IPC 8 full level

H01L 21/683 (2006.01); C09J 7/29 (2018.01)

CPC (source: EP KR US)

C08G 18/6229 (2013.01 - EP US); C08G 18/8029 (2013.01 - EP US); C08G 18/8116 (2013.01 - EP US); C09J 7/29 (2017.12 - EP US); C09J 175/16 (2013.01 - EP US); H01L 21/30 (2013.01 - KR); H01L 21/6836 (2013.01 - EP US); H01L 21/78 (2013.01 - KR US); C09J 2203/326 (2013.01 - EP US); H01L 2221/68327 (2013.01 - EP US); H01L 2221/6834 (2013.01 - EP US); H01L 2221/68381 (2013.01 - EP US)

Citation (applicant)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

EP 2654076 A2 20131023; CN 103377977 A 20131030; JP 2013222846 A 20131028; KR 20130117676 A 20131028; TW 201403694 A 20140116; US 2013273716 A1 20131017

DOCDB simple family (application)

EP 13163836 A 20130416; CN 201310132126 A 20130416; JP 2012093856 A 20120417; KR 20130040825 A 20130415; TW 102113667 A 20130417; US 201313863683 A 20130416