EP 2655685 A1 20131030 - METHOD AND DEVICE FOR DEPOSITING SILICON ON A SUBSTRATE
Title (en)
METHOD AND DEVICE FOR DEPOSITING SILICON ON A SUBSTRATE
Title (de)
VERFAHREN UND VORRICHTUNG ZUR ABSCHEIDUNG VON SILIZIUM AUF EINEM SUBSTRAT
Title (fr)
PROCÉDÉ ET DISPOSITIF POUR DÉPOSER DU SILICIUM SUR UN SUBSTRAT
Publication
Application
Priority
- DE 102010055564 A 20101223
- EP 2011006543 W 20111223
Abstract (en)
[origin: WO2012084261A1] The invention relates to a method for depositing silicon on a substrate (32) using a focused beam of charged particles (14). A precursor (20) containing silicon is provided, said precursor being dissociated by the beam (14) in the immediate vicinity of the substrate (32). The aim of the invention is to allow the deposition of silicon on a substrate (32) in a particularly effective, material-protecting, and precise manner. For this purpose, a polysilane is used as the precursor (20).
IPC 8 full level
C23C 14/22 (2006.01); H01L 21/02 (2006.01)
CPC (source: EP US)
C08G 77/60 (2013.01 - EP US); C09D 183/16 (2013.01 - EP US); C23C 16/24 (2013.01 - EP US); C23C 16/4488 (2013.01 - US); C23C 16/4551 (2013.01 - EP US); C23C 16/487 (2013.01 - US); H01L 21/02532 (2013.01 - EP US); H01L 21/0262 (2013.01 - EP US); H01L 21/02636 (2013.01 - EP US)
Citation (search report)
See references of WO 2012084261A1
Citation (examination)
JP H0945922 A 19970214 - SHOWA DENKO KK
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2012084261 A1 20120628; DE 102010055564 A1 20120628; EP 2655685 A1 20131030; JP 2014501216 A 20140120; JP 5883025 B2 20160309; US 2014295105 A1 20141002
DOCDB simple family (application)
EP 2011006543 W 20111223; DE 102010055564 A 20101223; EP 11811328 A 20111223; JP 2013545114 A 20111223; US 201113996441 A 20111223