EP 2657768 A3 20140108 - Optically semitransmissive film, photomask blank and photomask, and method for designing optically semitransmissive film
Title (en)
Optically semitransmissive film, photomask blank and photomask, and method for designing optically semitransmissive film
Title (de)
Optisch semitransmissiver Film, Photomaskenrohling und Photomaske, und Verfahren zum Entwurf eines optisch semitransmissiven Films
Title (fr)
Film semi-transmissif optiquement, ébauche de photomasque et photomasque et procédé de conception de film semi-transmissif optiquement
Publication
Application
Priority
- JP 2004178895 A 20040616
- JP 2005137171 A 20050510
- EP 05749063 A 20050610
- JP 2005010713 W 20050610
Abstract (en)
[origin: EP1783546A1] The present invention provides an optically semitransmissive film that has a near-zero phase shift, has a desired transmissivity, and is relatively thin; a novel phase-shift mask that uses the optically semitransmissive film; a photomask blank that can [be used to] manufacture the phase-shift mask; and a method for designing the optically semitransmissive film. The film is formed on a translucent substrate and transmits a portion of light having a desired wavelength », wherein the film has at least one phase-difference reduction layer that fulfills the following functions. Specifically, the phase-difference reduction layer is a layer that has a refractive index n and a thickness d that satisfy the expression 0 < d »(2(n-1)), and is a layer in which the value ¸ (hereinafter referred to as phase difference ¸ (units: degrees)) obtained by subtracting the phase of light (hereinafter referred to as layer-referenced light) in the absence of a layer from the phase of light (hereinafter referred to as layer-transmitted light) transmitted through a layer is less than the value ¸ 0 = (360/»)×(n - 1)×d (hereinafter referred to as the phase difference ¸ 0 (units: degrees)) calculated based on the difference in the optical distance between the layer-transmitted light and the layer-referenced light.
IPC 8 full level
G03F 1/26 (2012.01); G03F 1/29 (2012.01); G03F 1/32 (2012.01); G03F 1/34 (2012.01); G03F 1/50 (2012.01); G03F 1/54 (2012.01); G03F 1/68 (2012.01); G03F 1/80 (2012.01); H01L 21/027 (2006.01)
CPC (source: EP KR US)
G03F 1/26 (2013.01 - EP KR US); G03F 1/32 (2013.01 - EP KR US); G03F 1/34 (2013.01 - EP KR US); G03F 1/54 (2013.01 - EP KR US)
Citation (search report)
- [XY] JP 2004029746 A 20040129 - MATSUSHITA ELECTRIC IND CO LTD
- [Y] EP 1365288 A1 20031126 - MATSUSHITA ELECTRIC IND CO LTD [JP]
- [Y] US 2003180630 A1 20030925 - SHIOTA YUUKI [JP], et al
Designated contracting state (EPC)
DE
DOCDB simple family (publication)
EP 1783546 A1 20070509; EP 1783546 A4 20130109; EP 1783546 B1 20140305; EP 2657768 A2 20131030; EP 2657768 A3 20140108; EP 2657768 B1 20200805; JP 2009086681 A 20090423; JP 4330622 B2 20090916; JP 4507216 B2 20100721; JP WO2005124454 A1 20080417; KR 100967995 B1 20100707; KR 101004395 B1 20101228; KR 101052654 B1 20110728; KR 101149123 B1 20120525; KR 20070022148 A 20070223; KR 20080111119 A 20081222; KR 20090084957 A 20090805; KR 20110043745 A 20110427; TW 200606577 A 20060216; TW I282483 B 20070611; US 2007269723 A1 20071122; US 2010159368 A1 20100624; US 2011207032 A1 20110825; US 2013011772 A1 20130110; US 2013309602 A1 20131121; US 7651823 B2 20100126; US 7955762 B2 20110607; US 8110323 B2 20120207; US 8486588 B2 20130716; US 8580466 B1 20131112; WO 2005124454 A1 20051229
DOCDB simple family (application)
EP 05749063 A 20050610; EP 13176446 A 20050610; JP 2005010713 W 20050610; JP 2006514723 A 20050610; JP 2008318999 A 20081215; KR 20077000696 A 20050610; KR 20087027358 A 20050610; KR 20097013134 A 20050610; KR 20117005535 A 20050610; TW 94119962 A 20050616; US 201113098096 A 20110429; US 201113340228 A 20111229; US 201313917338 A 20130613; US 62921005 A 20050610; US 63210309 A 20091207