EP 2659518 A2 20131106 - LASER PROCESSING METHODS FOR PHOTOVOLTAIC SOLAR CELLS
Title (en)
LASER PROCESSING METHODS FOR PHOTOVOLTAIC SOLAR CELLS
Title (de)
LASERBEARBEITUNGSVERFAHREN FÜR FOTOVOTAISCHE SOLARZELLEN
Title (fr)
PROCÉDÉS DE TRAITEMENT AU LASER POUR CELLULES SOLAIRES PHOTOVOLTAÏQUES
Publication
Application
Priority
- US 201061428957 P 20101231
- US 201113271212 A 20111011
- US 201061428953 P 20101231
- US 201061428600 P 20101230
- US 201113303488 A 20111123
- US 201113057104 A 20110201
- US 201113118295 A 20110527
- US 2011068037 W 20111230
Abstract (en)
[origin: WO2012092537A2] Various laser processing schemes are disclosed for producing various types of hetero- junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero- junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
IPC 8 full level
H01L 31/068 (2012.01); B23K 26/06 (2014.01); B23K 26/40 (2014.01); H01L 21/268 (2006.01); H01L 31/0236 (2006.01); H01L 31/18 (2006.01)
CPC (source: EP KR)
B23K 26/0624 (2015.10 - EP KR); B23K 26/40 (2013.01 - EP KR); H01L 21/268 (2013.01 - EP KR); H01L 21/324 (2013.01 - KR); H01L 31/02363 (2013.01 - EP KR); H01L 31/0682 (2013.01 - EP KR); H01L 31/1804 (2013.01 - EP KR); B23K 2103/50 (2018.08 - EP KR); Y02E 10/547 (2013.01 - EP); Y02P 70/50 (2015.11 - EP)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2012092537 A2 20120705; WO 2012092537 A3 20121122; EP 2659518 A2 20131106; EP 2659518 A4 20140924; KR 101384853 B1 20140416; KR 20130099229 A 20130905
DOCDB simple family (application)
US 2011068037 W 20111230; EP 11853473 A 20111230; KR 20137020198 A 20111230