EP 2659523 A1 20131106 - COMPOSITE SUBSTRATE, SEMICONDUCTOR CHIP HAVING A COMPOSITE SUBSTRATE AND METHOD FOR PRODUCING COMPOSITE SUBSTRATES AND SEMICONDUCTOR CHIPS
Title (en)
COMPOSITE SUBSTRATE, SEMICONDUCTOR CHIP HAVING A COMPOSITE SUBSTRATE AND METHOD FOR PRODUCING COMPOSITE SUBSTRATES AND SEMICONDUCTOR CHIPS
Title (de)
VERBUNDSUBSTRAT, HALBLEITERCHIP MIT VERBUNDSUBSTRAT UND VERFAHREN ZUR HERSTELLUNG VON VERBUNDSUBSTRATEN UND HALBLEITERCHIPS
Title (fr)
SUBSTRAT COMPOSITE, PUCE À SEMI-CONDUCTEURS COMPORTANT UN SUBSTRAT COMPOSITE ET PROCÉDÉ DE FABRICATION DE SUBSTRATS COMPOSITES ET DE PUCES À SEMI-CONDUCTEURS
Publication
Application
Priority
- DE 102010056447 A 20101228
- DE 102011012298 A 20110224
- EP 2011073134 W 20111216
Abstract (en)
[origin: WO2012089540A1] The invention relates to a composite substrate (1) having a carrier (2) and a useful layer (5), wherein the useful layer is fastened to the carrier (2) by means of a dielectric connecting layer (3) and the carrier (2) contains a radiation conversion material. The invention furthermore relates to a semiconductor chip (10) having such a composite substrate, a method for producing a composite substrate and also a method for producing a semiconductor chip having a composite substrate are specified.
IPC 8 full level
C09K 11/00 (2006.01); H01L 33/00 (2010.01); H01L 33/08 (2010.01)
CPC (source: EP KR US)
C09K 11/00 (2013.01 - KR); H01L 21/02612 (2013.01 - US); H01L 21/78 (2013.01 - US); H01L 29/02 (2013.01 - US); H01L 33/00 (2013.01 - KR); H01L 33/0008 (2013.01 - KR); H01L 33/005 (2013.01 - KR); H01L 33/0093 (2020.05 - EP US); H01L 33/08 (2013.01 - EP KR US); H01L 33/32 (2013.01 - US); H01L 33/46 (2013.01 - US); H01L 33/505 (2013.01 - KR); H01L 33/507 (2013.01 - US); H01L 33/56 (2013.01 - KR); H01L 24/73 (2013.01 - EP US); H01L 2224/32225 (2013.01 - EP US); H01L 2224/48091 (2013.01 - EP US); H01L 2224/48227 (2013.01 - EP US); H01L 2224/49107 (2013.01 - EP US); H01L 2224/73265 (2013.01 - EP US)
Citation (search report)
See references of WO 2012089540A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2012089540 A1 20120705; CN 103262268 A 20130821; CN 103262268 B 20160921; DE 102011012298 A1 20120628; EP 2659523 A1 20131106; JP 2014501447 A 20140120; KR 101526090 B1 20150604; KR 20130102117 A 20130916; KR 20150031449 A 20150324; US 2014203413 A1 20140724; US 2015287883 A1 20151008; US 9123528 B2 20150901; US 9997671 B2 20180612
DOCDB simple family (application)
EP 2011073134 W 20111216; CN 201180063542 A 20111216; DE 102011012298 A 20110224; EP 11805000 A 20111216; JP 2013545230 A 20111216; KR 20137019929 A 20111216; KR 20157002312 A 20111216; US 201113883730 A 20111216; US 201514739684 A 20150615