Global Patent Index - EP 2660202 B1

EP 2660202 B1 20161228 - POLYCRYSTALLINE SILICON INGOT CASTING MOLD, AND SILICON NITRIDE POWDER FOR MOLD RELEASE MATERIAL, SLURRY CONTAINING SILICON NITRIDE POWDER FOR MOLD RELEASE LAYER AND CASTING RELEASE MATERIAL THEREFOR

Title (en)

POLYCRYSTALLINE SILICON INGOT CASTING MOLD, AND SILICON NITRIDE POWDER FOR MOLD RELEASE MATERIAL, SLURRY CONTAINING SILICON NITRIDE POWDER FOR MOLD RELEASE LAYER AND CASTING RELEASE MATERIAL THEREFOR

Title (de)

POLYKRISTALLINE SILIZIUMINGOTGIESSFORM UND SILICIUMNITRIDPULVER FÜR FORMTRENNMATERIAL, SUSPENSION MIT SILICIUMNITRIDPULVER FÜR FORMTRENNSCHICHT UND GUSSTRENNMATERIAL DAFÜR

Title (fr)

MOULE DE COULÉE DE LINGOT DE SILICIUM POLYCRISTALLIN ET POUDRE DE NITRURE DE SILICIUM POUR UNE MATIÈRE DE DÉMOULAGE, BOUILLIE CONTENANT DE LA POUDRE DE NITRURE DE SILICIUM POUR UNE COUCHE DE DÉMOULAGE ET MATIÈRE ANTIADHÉSIVE POUR PIÈCE COULÉE POUR CELLE-CI

Publication

EP 2660202 B1 20161228 (EN)

Application

EP 11854433 A 20110727

Priority

  • JP 2010293062 A 20101228
  • JP 2011067109 W 20110727

Abstract (en)

[origin: EP2660202A1] Provided is a mold for casting a polycrystalline silicon ingot, and a silicon nitride powder for a mold release material thereof, a slurry containing a silicon nitride power for a mold release layer thereof, and a mold release material for casting thereof, which can be obtained in low cost and have excellent adhesion to a mold, and prevents the formation of fragments and damage when releasing a solidified silicon ingot, forming a silicon ingot with high quality and in high yield. That is, the present invention relates to a silicon nitride powder for a mold release material of a mold for casting a polycrystalline silicon ingot characterized in that the percentage of primary particles of granular crystals monodispersed in powders is not less than 95% in terms of the area ratio calculated by analysis of an SEM image.

IPC 8 full level

C01B 33/02 (2006.01); B22C 3/00 (2006.01); B22C 9/06 (2006.01); B22D 18/02 (2006.01); B22D 21/00 (2006.01); B22D 25/04 (2006.01); B28B 7/36 (2006.01); C01B 21/068 (2006.01); C30B 11/00 (2006.01); C30B 29/06 (2006.01)

CPC (source: EP KR US)

B22C 3/00 (2013.01 - EP KR US); B22D 18/02 (2013.01 - EP US); B22D 21/00 (2013.01 - EP US); B22D 25/04 (2013.01 - KR); B28B 7/36 (2013.01 - US); C01B 21/068 (2013.01 - EP KR US); C01B 33/02 (2013.01 - EP KR US); C30B 11/002 (2013.01 - EP US); C30B 29/06 (2013.01 - EP US); C01P 2004/03 (2013.01 - EP US); C01P 2004/52 (2013.01 - EP US); C01P 2004/61 (2013.01 - EP US); C01P 2004/62 (2013.01 - EP US); C01P 2006/12 (2013.01 - EP US); C01P 2006/80 (2013.01 - EP US); Y10T 428/2982 (2015.01 - EP US)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

EP 2660202 A1 20131106; EP 2660202 A4 20151111; EP 2660202 B1 20161228; CN 103282307 A 20130904; CN 103282307 B 20150715; JP 5700052 B2 20150415; JP WO2012090543 A1 20140605; KR 20140005221 A 20140114; SG 191386 A1 20130830; US 2013273189 A1 20131017; US 8864481 B2 20141021; WO 2012090543 A1 20120705

DOCDB simple family (application)

EP 11854433 A 20110727; CN 201180062857 A 20110727; JP 2011067109 W 20110727; JP 2012550749 A 20110727; KR 20137019822 A 20110727; SG 2013049903 A 20110727; US 201113976280 A 20110727