EP 2664685 A1 20131120 - CU-CO-SI-ZR ALLOY MATERIAL AND METHOD FOR PRODUCING SAME
Title (en)
CU-CO-SI-ZR ALLOY MATERIAL AND METHOD FOR PRODUCING SAME
Title (de)
CU-CO-SI-ZR-LEGIERUNGSMATERIAL UND HERSTELLUNGSVERFAHREN DAFÜR
Title (fr)
MATIÈRE D'ALLIAGE DE CU-CO-SI-ZR ET SON PROCÉDÉ DE FABRICATION
Publication
Application
Priority
- JP 2011005088 A 20110113
- JP 2012050508 W 20120112
Abstract (en)
The present invention relates to a Cu-Co-Si-Zr alloy material which contains 1.0-2.5 wt% of Co, 0.2-0.7 wt% of Si and 0.001-0.5 wt% of Zr with the elemental ratio Co/Si being 3.5-5.0. The Cu-Co-Si-Zr alloy material contains second phase particles having a diameter of 0.20 µm or more but less than 1.00 µm at a density of 3,000-500,000 particles/mm 2 , and has a crystal grain size of 10 µm or less, an electrical conductivity of 60% IACS or more and good bending workability. The alloy material can be produced by setting the temperature of heating that is carried out after casting and before a solution heat treatment to a temperature that is higher than the later-described solution heat treatment temperature by 45 °C or more, by setting the cooling rate from the start temperature of hot rolling to 600 °C to 100 °C/min or less, and by selecting the solution heat treatment temperature from (50 X Co wt% + 775) °C to (50 X Co wt% + 825) °C (inclusive). The aging treatment after the solution heat treatment is preferably carried out at 450-650 ° C for 1-20 hours.
IPC 8 full level
C22C 9/06 (2006.01); C22F 1/08 (2006.01); H01B 1/02 (2006.01); H01B 13/00 (2006.01)
CPC (source: EP KR US)
C22C 9/06 (2013.01 - EP KR US); C22F 1/08 (2013.01 - EP KR US); H01B 1/02 (2013.01 - KR); H01B 1/026 (2013.01 - EP US); H01B 13/00 (2013.01 - KR)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
EP 2664685 A1 20131120; EP 2664685 A4 20140409; EP 2664685 B1 20151007; CN 103298961 A 20130911; CN 103298961 B 20150617; JP 2012144789 A 20120802; KR 20130122654 A 20131107; TW 201233819 A 20120816; TW I432587 B 20140401; US 2013284323 A1 20131031; WO 2012096351 A1 20120719
DOCDB simple family (application)
EP 12734565 A 20120112; CN 201280005365 A 20120112; JP 2011005088 A 20110113; JP 2012050508 W 20120112; KR 20137021206 A 20120112; TW 101100744 A 20120109; US 201213979103 A 20120112