EP 2671251 A2 20131211 - METHOD AND DEVICE FOR ELECTRICALLY CONTACT-CONNECTING CONNECTION AREAS OF TWO SUBSTRATES
Title (en)
METHOD AND DEVICE FOR ELECTRICALLY CONTACT-CONNECTING CONNECTION AREAS OF TWO SUBSTRATES
Title (de)
VERFAHREN UND VORRICHTUNG ZUR ELEKTRISCHEN KONTAKTIERUNG VON ANSCHLUSSFLÄCHEN ZWEIER SUBSTRATE
Title (fr)
PROCÉDÉ ET DISPOSITIF DE MISE EN CONTACT ÉLECTRIQUE DE SURFACES DE CONNEXION DE DEUX SUBSTRATS
Publication
Application
Priority
- DE 102011010161 A 20110202
- DE 2012000068 W 20120130
Abstract (en)
[origin: WO2012103868A2] The present invention relates to a method for electrically contact-connecting connection areas of two substrates (6, 7), more particularly of a chip (6) and of a carrier substrate (7). Furthermore, the invention relates to a device for performing a second phase of the method according to the invention. The method according to the invention is effected in two successive phases, wherein, in a first phase, the chip (6) is positioned with its connection areas against connection areas of the substrate (7) and laser energy (5) is applied to the chip (6) at the rear and, in a subsequent second phase, in a housing (3), a flux medium is applied and at the same time a reflow is performed by means of laser energy (5) being applied to the chip (6) at the rear, and a process of purging the housing interior is subsequently performed. The device according to the invention for performing a second phase of the method comprises a carrier table (1) and a housing (3), which together with a top side of the carrier table (1) forms a housing interior, in which the component arrangement is positioned, and also a laser light source (5), which is oriented in such a way that the laser radiation impinges on the first substrate (6) on the rear side.
IPC 8 full level
H01L 21/60 (2006.01); H01L 21/67 (2006.01)
CPC (source: EP KR US)
B23K 1/0056 (2013.01 - US); B23K 26/02 (2013.01 - US); B23K 35/362 (2013.01 - EP US); H01L 21/64 (2013.01 - KR); H01L 21/67 (2013.01 - KR); H01L 21/67005 (2013.01 - KR); H01L 24/75 (2013.01 - EP US); H01L 24/81 (2013.01 - EP US); H01L 24/16 (2013.01 - EP US); H01L 24/94 (2013.01 - EP US); H01L 25/0657 (2013.01 - EP US); H01L 25/50 (2013.01 - EP US); H01L 2224/16145 (2013.01 - EP US); H01L 2224/16221 (2013.01 - EP US); H01L 2224/7501 (2013.01 - EP US); H01L 2224/75101 (2013.01 - EP US); H01L 2224/75263 (2013.01 - EP US); H01L 2224/81065 (2013.01 - EP US); H01L 2224/81191 (2013.01 - EP US); H01L 2224/81192 (2013.01 - EP US); H01L 2224/81193 (2013.01 - EP US); H01L 2224/81224 (2013.01 - EP US); H01L 2224/81815 (2013.01 - EP US); H01L 2224/81907 (2013.01 - EP US); H01L 2224/8191 (2013.01 - EP US); H01L 2224/81986 (2013.01 - EP US); H01L 2225/06513 (2013.01 - EP US); H01L 2225/06517 (2013.01 - EP US); H01L 2924/014 (2013.01 - EP US); H01L 2924/12042 (2013.01 - EP US)
Citation (search report)
See references of WO 2012103868A2
Citation (examination)
- JP H0774209 A 19950317 - NIPPON DENSO CO
- US 3486223 A 19691230 - BUTERA GASPER A
- JP H06262743 A 19940920 - SEIKO EPSON CORP
- US 2008268571 A1 20081030 - KIM SUNG-WOOK [KR]
- DE 60219779 T2 20071227 - INTEL CORP [US]
- DE 69401108 T2 19970403 - AT & T CORP [US]
- CH 459316 A 19680715 - IBM [US]
- JP 2005294823 A 20051020 - HITACHI METALS LTD
- WO 2005005088 A2 20050120 - CHIPPAC INC [US], et al
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2012103868 A2 20120809; WO 2012103868 A3 20120927; WO 2012103868 A8 20121115; CN 103477424 A 20131225; CN 103477424 B 20161214; EP 2671251 A2 20131211; JP 2014506012 A 20140306; KR 20140014156 A 20140205; US 2014027418 A1 20140130; US 9649711 B2 20170516
DOCDB simple family (application)
DE 2012000068 W 20120130; CN 201280007342 A 20120130; EP 12714202 A 20120130; JP 2013552102 A 20120130; KR 20137022826 A 20120130; US 201213982837 A 20120130