Title (en)

SYSTEM, LASER-ON-CMOS CHIP, AND METHOD FOR SETTING A WAVELENGTH TO BE USED BY THE LASER-ON-CMOS CHIP

Title (de)

SYSTEM, LASER-ON-CMOS-CHIP UND VERFAHREN ZUR EINSTELLUNG EINER WELLENLÄNGE FÜR DEN LASER-ON-CMOS-CHIP

Title (fr)

SYSTÈME, PUCE LASER SUR CMOS ET PROCÉDÉ DE RÉGLAGE D'UNE LONGUEUR D'ONDE À UTILISER PAR LA PUCE LASER SUR CMOS

Publication

EP 2671331 B1 20171122 (EN)

Application

EP 12701171 A 20120105

Priority

• US 201113017166 A 20110131
• IB 2012050066 W 20120105

Abstract (en)

[origin: US2012195599A1] A system, a Laser-on-CMOS chip, and a method are described herein in accordance with the present invention. In one embodiment, the present invention enables a conventional WDM-capable system to dictate what wavelengths a Laser-on-CMOS chip's optical ports will use by seeding each of their LoC upstream reflective light generation devices (e.g., RSOAs) with a particular wavelength.

IPC 8 full level

H04B 10/516 (2013.01); H04B 10/2587 (2013.01); H04J 14/02 (2006.01)

CPC (source: BR EP US)

H04B 10/2587 (2013.01 - BR EP US); H04B 10/5162 (2013.01 - EP US); H04B 10/801 (2013.01 - EP US); H04J 14/0256 (2013.01 - EP US); H04B 10/5162 (2013.01 - BR); H04B 10/801 (2013.01 - BR); H04J 14/0256 (2013.01 - BR)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

US 2012195599 A1 20120802; US 8687971 B2 20140401; AU 2012213128 A1 20130822; AU 2012213128 A8 20160908; AU 2012213128 B2 20160825; BR 112013017747 A2 20161011; BR 112013017747 B1 20220621; BR 112013017747 B8 20220712; BR 112013017747 B8 20220719; CN 103348611 A 20131009; CN 103348611 B 20161109; EP 2671331 A1 20131211; EP 2671331 B1 20171122; WO 2012104736 A1 20120809

DOCDB simple family (application)

US 201113017166 A 20110131; AU 2012213128 A 20120105; BR 112013017747 A 20120105; CN 201280007192 A 20120105; EP 12701171 A 20120105; IB 2012050066 W 20120105