EP 2678891 A1 20140101 - ELECTRODE MATERIAL HAVING HIGH CAPACITANCE
Title (en)
ELECTRODE MATERIAL HAVING HIGH CAPACITANCE
Title (de)
ELEKTRODENMATERIAL MIT HOHER KAPAZITÄT
Title (fr)
MATÉRIAU D'ÉLECTRODE DOTÉ D'UNE CAPACITÉ ÉLEVÉE
Publication
Application
Priority
- DE 102011004564 A 20110223
- EP 2012051300 W 20120127
Abstract (en)
[origin: WO2012113606A1] The invention relates to a silicon-carbon composite comprising at least one portion of hard carbon and one portion of silicon powder, said composite being obtained by virtue of the fact that under a noble gas atmosphere a) the hard carbon portion is treated at high energy at least once in a mechanofusion mixer, and b) afterwards the portion of silicon powder is added thereto and the portions are mixed together, or during step a) the portion of silicon powder is added thereto and the mechanofusion treatment is continued, and said composite being characterized in that the composite has an average particle size of less than or equal to 12 µm, a portion of hard carbon of 5 to 50% by weight and a portion of silicon powder of 5 to 50% by weight.
IPC 8 full level
H01M 4/133 (2010.01); H01M 4/134 (2010.01); H01M 4/1393 (2010.01); H01M 4/1395 (2010.01); H01M 10/0525 (2010.01)
CPC (source: CN EP KR US)
C01B 21/068 (2013.01 - EP US); H01M 4/04 (2013.01 - US); H01M 4/133 (2013.01 - CN EP KR US); H01M 4/134 (2013.01 - CN EP KR US); H01M 4/1393 (2013.01 - CN EP KR US); H01M 4/1395 (2013.01 - CN EP KR US); H01M 4/364 (2013.01 - CN EP US); H01M 10/0525 (2013.01 - CN EP KR US); Y02E 60/10 (2013.01 - EP); Y10T 29/49115 (2015.01 - EP US)
Citation (search report)
See references of WO 2012113606A1
Citation (examination)
CN 1705150 A 20051207 - PAN SHUMING [CN]
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
DE 102011004564 A1 20120823; CN 103518275 A 20140115; EP 2678891 A1 20140101; JP 2014511546 A 20140515; KR 20140014142 A 20140205; US 2013337334 A1 20131219; WO 2012113606 A1 20120830
DOCDB simple family (application)
DE 102011004564 A 20110223; CN 201280010440 A 20120127; EP 12702788 A 20120127; EP 2012051300 W 20120127; JP 2013554829 A 20120127; KR 20137022118 A 20120127; US 201214000877 A 20120127