EP 2691990 A2 20140205 - ACTIVE BACKPLANE FOR THIN SILICON SOLAR CELLS
Title (en)
ACTIVE BACKPLANE FOR THIN SILICON SOLAR CELLS
Title (de)
AKTIVE RÜCKWAND FÜR DÜNNE SILICIUM-SOLARZELLEN
Title (fr)
PANNEAU ARRIÈRE ACTIF POUR CELLULES SOLAIRES EN SILICIUM MINCES
Publication
Application
Priority
- US 201161468548 P 20110328
- US 2012031043 W 20120328
Abstract (en)
[origin: WO2012135395A2] Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, attaching a prepeg backplane to the interdigitated pattern of base electrodes and emitter electrodes, forming holes in the prepeg backplane which provide access to the first layer of electrically conductive metal, and depositing a second layer of electrically conductive metal on the backside surface of the prepeg backplane forming an electrical interconnect with the first layer of electrically conductive metal through the holes in the prepeg backplane.
IPC 8 full level
H01L 31/042 (2014.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/05 (2014.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01)
CPC (source: EP KR)
H01L 31/0216 (2013.01 - KR); H01L 31/022441 (2013.01 - EP); H01L 31/04 (2013.01 - KR); H01L 31/0516 (2013.01 - EP); H01L 31/0682 (2013.01 - EP); H01L 31/18 (2013.01 - KR); H01L 31/1892 (2013.01 - EP); Y02E 10/547 (2013.01 - EP)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2012135395 A2 20121004; WO 2012135395 A3 20130207; EP 2691990 A2 20140205; EP 2691990 A4 20140903; KR 102015591 B1 20190828; KR 20140027188 A 20140306
DOCDB simple family (application)
US 2012031043 W 20120328; EP 12765891 A 20120328; KR 20137028432 A 20120328