EP 2697826 A4 20141022 - LOW TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS
Title (en)
LOW TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS
Title (de)
AUFBRINGUNG VON SILICIUMOXIDFILMEN BEI NIEDRIGEN TEMPERATUREN
Title (fr)
DÉPÔT À BASSE TEMPÉRATURE DE FILMS D'OXYDE DE SILICIUM
Publication
Application
Priority
- US 201161474415 P 20110412
- US 2012031122 W 20120329
Abstract (en)
[origin: WO2012141908A1] Deposition of silicon oxide films at low temperature by using wet chemistry techniques. The wet chemistry solution may be a mixture of sodium hypochloride (NaOCl), tetra methyl ammonium hydroxide (TMAH) and hydrated silicate, such as silicic acid. The resulting silicon oxide films provide excellent anti-reflective coatings for solar cells and the like.
IPC 8 full level
H01L 31/18 (2006.01); H01L 21/316 (2006.01); H01L 31/0216 (2014.01)
CPC (source: EP)
H01L 21/02238 (2013.01); H01L 31/02168 (2013.01); H01L 31/18 (2013.01); Y02E 10/50 (2013.01)
Citation (search report)
- [XAI] US 5616233 A 19970401 - JENN-GWO HWU [TW], et al
- [XAI] US 2002106865 A1 20020808 - CHEN TAI-JU [TW], et al
- [A] EP 1293488 A1 20030319 - TOYO GOSEI KOGYO KK [JP]
- See references of WO 2012141908A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2012141908 A1 20121018; WO 2012141908 A8 20121122; EP 2697826 A1 20140219; EP 2697826 A4 20141022; SG 194085 A1 20131129; TW 201307610 A 20130216
DOCDB simple family (application)
US 2012031122 W 20120329; EP 12770650 A 20120329; SG 2013074265 A 20120329; TW 101113065 A 20120412