Global Patent Index - EP 2698456 A4

EP 2698456 A4 20141105 - METHOD FOR MANUFACTURING GROUP III NITRIDE CRYSTAL AND GROUP III NITRIDE CRYSTAL

Title (en)

METHOD FOR MANUFACTURING GROUP III NITRIDE CRYSTAL AND GROUP III NITRIDE CRYSTAL

Title (de)

VERFAHREN ZUR HERSTELLUNG EINES GRUPPE-III-NITRID-KRISTALLS UND GRUPPE-III-NITRID-KRISTALL

Title (fr)

PROCÉDÉ POUR LA FABRICATION D'UN CRISTAL DE NITRURE DU GROUPE III ET CRISTAL DE NITRURE DU GROUPE III

Publication

EP 2698456 A4 20141105 (EN)

Application

EP 12771993 A 20120413

Priority

  • JP 2011091586 A 20110415
  • JP 2011151709 A 20110708
  • JP 2012060187 W 20120413

Abstract (en)

[origin: EP2698456A1] Provided is a high-quality Group III nitride crystal of excellent processability. A Group III nitride crystal is produced by forming a film is composed of an oxide, hydroxide and/or oxyhydroxide containing a Group III element by heat-treating a Group III nitride single crystal at 1000°C or above, and removing the film.

IPC 8 full level

C30B 29/38 (2006.01); C30B 33/02 (2006.01)

CPC (source: EP KR US)

C30B 29/38 (2013.01 - KR); C30B 29/406 (2013.01 - EP US); C30B 33/02 (2013.01 - EP KR US); H01L 21/0254 (2013.01 - US); H01L 29/2003 (2013.01 - US)

Citation (search report)

  • [X] US 6180270 B1 20010130 - COLE MELANIE [US], et al
  • [I] JP 2008060519 A 20080313 - NGK INSULATORS LTD, et al
  • [A] JP 2008044842 A 20080228 - NEC CORP, et al
  • [A] JP 2001192300 A 20010717 - SHARP KK
  • [X] DATTA R ET AL: "Growth and characterisation of GaN with reduced dislocation density", SUPERLATTICES AND MICROSTRUCTURES, ACADEMIC PRESS, LONDON, GB, vol. 36, no. 4-6, 1 October 2004 (2004-10-01), pages 393 - 401, XP004655537, ISSN: 0749-6036, DOI: 10.1016/J.SPMI.2004.09.003
  • [X] R J KAMALADASA ET AL: "Basic principles and application of electron channeling in a scanning electron microscope for dislocation analysis", MICROSCOPY: SCIENCE, TECHNOLOGY, APPLICATIONS AND EDUCATION, vol. 4, 31 December 2010 (2010-12-31), pages 1583 - 1590, XP055036947
  • See references of WO 2012141317A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

EP 2698456 A1 20140219; EP 2698456 A4 20141105; EP 2698456 B1 20180725; CN 103502514 A 20140108; JP 2012231103 A 20121122; KR 101882541 B1 20180726; KR 20140017598 A 20140211; US 2014035103 A1 20140206; US 9502241 B2 20161122; WO 2012141317 A1 20121018

DOCDB simple family (application)

EP 12771993 A 20120413; CN 201280018140 A 20120413; JP 2011151709 A 20110708; JP 2012060187 W 20120413; KR 20137026845 A 20120413; US 201314054036 A 20131015