Global Patent Index - EP 2710642 A1

EP 2710642 A1 20140326 - BACK-CONTACT SOLAR CELL AND METHOD FOR PRODUCING SUCH A BACK-CONTACT SOLAR CELL

Title (en)

BACK-CONTACT SOLAR CELL AND METHOD FOR PRODUCING SUCH A BACK-CONTACT SOLAR CELL

Title (de)

RÜCKKONTAKTSOLARZELLE UND VERFAHREN ZUM HERSTELLEN EINER SOLCHEN

Title (fr)

CELLULE SOLAIRE À CONTACT ARRIÈRE ET SON PROCÉDÉ DE FABRICATION

Publication

EP 2710642 A1 20140326 (DE)

Application

EP 12721835 A 20120515

Priority

  • DE 102011050434 A 20110517
  • DE 102011050803 A 20110601
  • DE 102011051511 A 20110701
  • EP 2012059002 W 20120515

Abstract (en)

[origin: WO2012156398A1] The invention relates to a back-contact solar cell and to a method for producing a solar cell that has a semiconductor substrate of a first conductivity type having a front side and a back side, comprising the method steps of producing a plurality of passage openings extending from the front side to the back side, creating a layer of a conductivity type opposite the first conductivity type along the front side, producing a front-side contact in the form of a metallization and a back-side contact, wherein the front-side contact is connected in an electrically conductive manner to back-side contact areas that bound the passage openings on the back side and are electrically insulated with respect to the back side, and connecting the back-side contact areas to one another. In order to produce the solar cell more cost-effectively compared to the prior art and to achieve high long-term stability, according to the invention electrically conductive front-side contact areas that bound the passage openings on the front side are formed when the front-side contact is formed, the passage openings are provided with an electrically insulating first layer on the inside, and an electrically conductive material is subsequently introduced, starting from the back side, through the passage openings up to the front-side contact areas while the back-side contact areas are simultaneously formed.

IPC 8 full level

H01L 31/18 (2006.01); H01L 31/0224 (2006.01); H01R 43/02 (2006.01)

CPC (source: EP US)

H01L 31/02008 (2013.01 - US); H01L 31/02245 (2013.01 - EP US); Y02E 10/50 (2013.01 - EP US)

Citation (search report)

See references of WO 2012156398A1

Citation (examination)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

WO 2012156398 A1 20121122; DE 102011051511 A1 20121122; EP 2710642 A1 20140326; TW 201306283 A 20130201; US 2014318614 A1 20141030

DOCDB simple family (application)

EP 2012059002 W 20120515; DE 102011051511 A 20110701; EP 12721835 A 20120515; TW 101117531 A 20120517; US 201214118107 A 20120515