Global Patent Index - EP 2712462 A1

EP 2712462 A1 20140402 - INSULATION SYSTEMS HAVING IMPROVED PARTIAL DISCHARGE RESISTANCE, AND METHOD FOR PRODUCING SAME

Title (en)

INSULATION SYSTEMS HAVING IMPROVED PARTIAL DISCHARGE RESISTANCE, AND METHOD FOR PRODUCING SAME

Title (de)

ISOLIERSYSTEME MIT VERBESSERTER TEILENTLADUNGSBESTÄNDIGKEIT, VERFAHREN ZUR HERSTELLUNG DAZU

Title (fr)

SYSTÈMES ISOLANTS À TENUE AMÉLIORÉE AUX DÉCHARGES PARTIELLES ET PROCÉDÉ DE FABRICATION DESDITS SYSTÈMES ISOLANTS

Publication

EP 2712462 A1 20140402 (DE)

Application

EP 12753988 A 20120903

Priority

  • DE 102011083228 A 20110922
  • EP 2012067141 W 20120903

Abstract (en)

[origin: WO2013041363A1] The invention relates generally to the field of insulating electric conductors against partial discharge and specifically to a method for producing an insulation system having improved partial discharge resistance and to an insulation system having improved partial discharge resistance. The invention shows for the first time the surprising erosion-inhibiting effect of adhesion promoters, such as organic silicon compounds, added to resin when admixing nano particulate fillers. As a result of the introduction of the adhesion promoters into the resin before the nano particulate filler, surprisingly good results are achieved. It is discussed whether the good results, as indicated in figures 2 to 4, can be attributed to a type of particle wetting of the nano particles as a result of particle wetting with the organosilanes. In any case, it can convincingly be shown that the admixture of adhesion promoters with the resin before the addition of the nano particulate filler can provide considerable advantages.

IPC 8 full level

H01B 3/40 (2006.01); B82Y 30/00 (2011.01); C08K 5/54 (2006.01); H01B 3/04 (2006.01); H01B 19/04 (2006.01); H02K 3/30 (2006.01); H02K 3/40 (2006.01)

CPC (source: EP US)

B82Y 30/00 (2013.01 - EP US); H01B 3/002 (2013.01 - EP US); H01B 3/04 (2013.01 - EP US); H01B 3/40 (2013.01 - EP US); H01B 19/02 (2013.01 - EP US); H01B 19/04 (2013.01 - EP US)

Citation (search report)

See references of WO 2013041363A1

Citation (examination)

WO 2011138413 A2 20111110 - SIEMENS AG [DE], et al

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

DE 102011083228 A1 20130328; CN 103797544 A 20140514; CN 109243672 A 20190118; EP 2712462 A1 20140402; KR 20140079787 A 20140627; RU 2014115974 A 20151027; RU 2623493 C2 20170627; US 2014326481 A1 20141106; US 9589699 B2 20170307; WO 2013041363 A1 20130328

DOCDB simple family (application)

DE 102011083228 A 20110922; CN 201280045367 A 20120903; CN 201811109529 A 20120903; EP 12753988 A 20120903; EP 2012067141 W 20120903; KR 20147010741 A 20120903; RU 2014115974 A 20120903; US 201214345692 A 20120903