EP 2713402 A3 20160113 - Normally-off high electron mobility transistor
Title (en)
Normally-off high electron mobility transistor
Title (de)
Selbstsperrender Transistor mit hoher Elektronenmobilität
Title (fr)
Transistor à haute mobilité d'électrons normalement bloqué
Publication
Application
Priority
KR 20120109267 A 20120928
Abstract (en)
[origin: EP2713402A2] A normally-off high electron mobility transistor (HEMT) includes: a channel layer (120) having a first nitride semiconductor, a channel supply layer (130) on the channel layer, a source electrode (161) and a drain electrode (162) at sides of the channel supply layer, a depletion-forming layer (140) on the channel supply layer, a gate insulating layer (150) on the depletion-forming layer, and a gate electrode (170) on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer.
IPC 8 full level
H01L 29/10 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01)
CPC (source: CN EP KR US)
H01L 21/18 (2013.01 - KR); H01L 29/1066 (2013.01 - CN EP US); H01L 29/778 (2013.01 - KR US); H01L 29/7786 (2013.01 - CN EP US); H01L 29/2003 (2013.01 - CN EP US); H01L 29/402 (2013.01 - CN EP US); H01L 29/42316 (2013.01 - CN EP US)
Citation (search report)
- [XI] US 2010097105 A1 20100422 - MORITA TATSUO [JP], et al
- [XI] DE 102011000911 A1 20110901 - INFINEON TECHNOLOGIES AUSTRIA [AT]
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 2713402 A2 20140402; EP 2713402 A3 20160113; EP 2713402 B1 20210324; CN 103715240 A 20140409; JP 2014072528 A 20140421; JP 6367533 B2 20180801; KR 101922122 B1 20181126; KR 20140042470 A 20140407; US 2014091363 A1 20140403; US 8890212 B2 20141118
DOCDB simple family (application)
EP 13173455 A 20130624; CN 201310128726 A 20130415; JP 2013199373 A 20130926; KR 20120109267 A 20120928; US 201313874920 A 20130501