Global Patent Index - EP 2713402 A3

EP 2713402 A3 20160113 - Normally-off high electron mobility transistor

Title (en)

Normally-off high electron mobility transistor

Title (de)

Selbstsperrender Transistor mit hoher Elektronenmobilität

Title (fr)

Transistor à haute mobilité d'électrons normalement bloqué

Publication

EP 2713402 A3 20160113 (EN)

Application

EP 13173455 A 20130624

Priority

KR 20120109267 A 20120928

Abstract (en)

[origin: EP2713402A2] A normally-off high electron mobility transistor (HEMT) includes: a channel layer (120) having a first nitride semiconductor, a channel supply layer (130) on the channel layer, a source electrode (161) and a drain electrode (162) at sides of the channel supply layer, a depletion-forming layer (140) on the channel supply layer, a gate insulating layer (150) on the depletion-forming layer, and a gate electrode (170) on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer.

IPC 8 full level

H01L 29/10 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01)

CPC (source: CN EP KR US)

H01L 21/18 (2013.01 - KR); H01L 29/1066 (2013.01 - CN EP US); H01L 29/778 (2013.01 - KR US); H01L 29/7786 (2013.01 - CN EP US); H01L 29/2003 (2013.01 - CN EP US); H01L 29/402 (2013.01 - CN EP US); H01L 29/42316 (2013.01 - CN EP US)

Citation (search report)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

EP 2713402 A2 20140402; EP 2713402 A3 20160113; EP 2713402 B1 20210324; CN 103715240 A 20140409; JP 2014072528 A 20140421; JP 6367533 B2 20180801; KR 101922122 B1 20181126; KR 20140042470 A 20140407; US 2014091363 A1 20140403; US 8890212 B2 20141118

DOCDB simple family (application)

EP 13173455 A 20130624; CN 201310128726 A 20130415; JP 2013199373 A 20130926; KR 20120109267 A 20120928; US 201313874920 A 20130501