EP 2714968 A1 20140409 - PROCESS FOR THE GROWTH OF A CRYSTALLINE SOLID, ASSOCIATED CRYSTALLINE SOLID AND DEVICE
Title (en)
PROCESS FOR THE GROWTH OF A CRYSTALLINE SOLID, ASSOCIATED CRYSTALLINE SOLID AND DEVICE
Title (de)
VERFAHREN ZUR ZÜCHTUNG EINES FESTKRISTALLES, ZUGEHÖRIGER FESTKRISTALL UND VORRICHTUNG
Title (fr)
PROCEDE DE CROISSANCE D'UN SOLIDE CRISTALLIN, SOLIDE CRISTALLIN ET DISPOSITIF ASSOCIES
Publication
Application
Priority
- FR 1154529 A 20110524
- FR 2012051136 W 20120522
Abstract (en)
[origin: WO2012160306A1] The present invention relates to a process for the growth of a crystalline solid by melting then cooling a crystallization material (2), in which the crystallization material (2) spread over a support is melted in the operating region (4) of a heat source. According to this process: outside of the operating region, the crystallization material (2) is spread over at least two areas of different compositions (31, 32, 33, 34, 35), and the crystallization material (2) being spread over a length greater than the length of the operating region (4), a movement of the operating region (4) relative to the crystallization material (2) is carried out so as to place successively in the operating region (4) then outside of the operating region, portions of the crystallization material of different compositions. This process is used to manufacture laser crystals having a controlled spatial distribution of doping.
IPC 8 full level
C30B 11/00 (2006.01); C30B 13/00 (2006.01); C30B 13/10 (2006.01); C30B 29/28 (2006.01)
CPC (source: EP US)
C30B 11/001 (2013.01 - EP US); C30B 11/002 (2013.01 - EP US); C30B 13/00 (2013.01 - US); C30B 13/005 (2013.01 - EP US); C30B 13/10 (2013.01 - EP US); C30B 29/28 (2013.01 - EP US); Y10T 117/108 (2015.01 - EP US)
Citation (search report)
See references of WO 2012160306A1
Citation (examination)
- BENZ K W ET AL: "GaSb AND InSb CRYSTALS GROWN BY VERTICAL AND HORIZONTAL,TRAVELLING HEATER METHOD", JOURNAL OF CRYSTAL GROWTH,, vol. 46, 1 January 1979 (1979-01-01), pages 35 - 42, XP001303519
- EL MOKRI A ET AL: "Growth of large, high purity, low cost, uniform CdZnTe crystals by the ''cold travelling heater method''", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 138, no. 1-4, 2 April 1994 (1994-04-02), pages 168 - 174, XP024502317, ISSN: 0022-0248, [retrieved on 19940402], DOI: 10.1016/0022-0248(94)90800-1
- TRIBOULET R ET AL: "Cold travelling heater method, a novel technique of synthesis, purification and growth of CdTe and ZnTe", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 101, no. 1-4, 1 April 1990 (1990-04-01), pages 216 - 220, XP026987877, ISSN: 0022-0248, [retrieved on 19900401]
- FRITZ V WALD ET AL: "NATURAL AND FORCED CONVECTION DURING SOLUTION GROWTH OF CdTe BY THE TRAVELING HEATER METHOD (THM)", JOURNAL OF CRYSTAL GROWTH,, vol. 30, no. 1, 1 August 1975 (1975-08-01), pages 29 - 36, XP001303532
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2012160306 A1 20121129; EP 2714968 A1 20140409; FR 2975707 A1 20121130; FR 2975707 B1 20140711; JP 2014516020 A 20140707; US 2014083351 A1 20140327
DOCDB simple family (application)
FR 2012051136 W 20120522; EP 12731036 A 20120522; FR 1154529 A 20110524; JP 2014511936 A 20120522; US 201214119619 A 20120522