EP 2719663 A1 20140416 - PROCESS FOR DEPOSITION OF POLYCRYSTALLINE SILICON
Title (en)
PROCESS FOR DEPOSITION OF POLYCRYSTALLINE SILICON
Title (de)
VERFAHREN ZUR ABSCHEIDUNG VON POLYKRISTALLINEM SILIZIUM
Title (fr)
PROCÉDÉ DE DÉPOSITION DE SILICIUM POLYCRISTALLIN
Publication
Application
Priority
DE 102012218747 A 20121015
Abstract (en)
Depositing polycrystalline silicon, comprises introducing a reaction gas comprising a silicon containing component and hydrogen into a reactor, depositing polycrystalline silicon in the form of rods, introducing a silicon or silicon-containing compounds acting gas into the reactor, circulating silicon or silicon-containing compounds attacking gas around the polycrystalline rods and an inner wall of reactor to assist in the formed deposit, and adhering silicon-containing particles to the inner wall of the reactor or on the polycrystalline silicon rods before removing the rods from the reactor. Deposition of polycrystalline silicon, comprises introducing a reaction gas comprising a silicon containing component and hydrogen into a reactor, depositing polycrystalline silicon in the form of rods, introducing a silicon or silicon-containing compounds acting gas into the reactor, circulating silicon or silicon-containing compounds attacking gas around the polycrystalline rods and an inner wall of reactor to assist in the formed deposit, and adhering silicon-containing particles to the inner wall of the reactor or on the polycrystalline silicon rods before removing the polycrystalline silicon rods from the reactor.
Abstract (de)
Die Erfindung betrifft ein Verfahren zur Abscheidung von polykristallinem Silicium, umfassend Einleiten eines Reaktionsgases enthaltend eine Silicium enthaltende Komponente und Wasserstoff in einen Reaktor, wodurch polykristallines Silicium in Form von Stäben abgeschieden wird, dadurch gekennzeichnet, dass nach Beendigung der Abscheidung ein Silicium oder siliciumhaltige Verbindungen angreifendes Gas in den Reaktor geleitet wird, das die polykristallinen Stäbe und eine Reaktorinnenwand umströmt, um bei der Abscheidung gebildete, an der Reaktorinnenwand oder an den polykristallinen Siliciumstäben anhaftende Siliciumpartikel aufzulösen, bevor die polykristallinen Siliciumstäbe aus dem Reaktor entnommen werden.
IPC 8 full level
C01B 33/035 (2006.01)
CPC (source: EP US)
C01B 33/027 (2013.01 - US); C01B 33/035 (2013.01 - EP US)
Citation (applicant)
- EP 2077252 A2 20090708 - MITSUBISHI MATERIALS CORP [JP]
- US 6350313 B2 20020226 - KRAUS HEINZ [DE], et al
- US 2010219380 A1 20100902 - HERTLEIN HARALD [DE], et al
- US 5108512 A 19920428 - GOFFNETT DAVID M [US], et al
- US 6916657 B2 20050712 - HORI KENJI [JP], et al
- DE 19502865 A1 19950803 - HEMLOCK SEMICONDUCTOR CORP [US]
- WO 2009003688 A2 20090108 - SCHOTT SOLAR GMBH [DE], et al
- DE 102010039751 A1 20120301 - MAN DIESEL & TURBO SE [DE]
- US 6309467 B1 20011030 - WOCHNER HANNS [DE], et al
Citation (search report)
- [YD] US 5108512 A 19920428 - GOFFNETT DAVID M [US], et al
- [Y] WO 2007145474 A1 20071221 - KOREA RES INST CHEM TECH [KR], et al
- [A] US 2010112744 A1 20100506 - MOLNAR MICHAEL JOHN [US]
- [A] EP 1223145 A1 20020717 - KOREA RES INST CHEM TECH [KR]
- [A] EP 0638923 A2 19950215 - APPLIED MATERIALS INC [US]
- [A] DATABASE CA [online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; 11 July 2012 (2012-07-11), JIANG, HONGFU ET AL: "Preparation method of polysilicon by adding oxidative gas to reduce atomization and modify surface morphology of product", XP002718495, retrieved from STN Database accession no. 157:265485 & CN 102557038 A 20120711 - JIANGSU ZHONGNENG SILICON INDUSTRY TECHNOLOGY DEV CO LTD
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 2719663 A1 20140416; EP 2719663 B1 20160330; CA 2824088 A1 20140415; CA 2824088 C 20150630; CN 103723732 A 20140416; CN 103723732 B 20160120; DE 102012218747 A1 20140417; ES 2577408 T3 20160714; JP 2014080352 A 20140508; JP 5684345 B2 20150311; KR 20140048034 A 20140423; TW 201414673 A 20140416; TW I494273 B 20150801; US 2014105806 A1 20140417
DOCDB simple family (application)
EP 13187018 A 20131002; CA 2824088 A 20130815; CN 201310414982 A 20130912; DE 102012218747 A 20121015; ES 13187018 T 20131002; JP 2013170952 A 20130821; KR 20130108931 A 20130911; TW 102129637 A 20130819; US 201314032261 A 20130920