EP 2720809 A4 20150114 - DIRECT GRAPHENE GROWTH ON MGO (111) BY PHYSICAL VAPOR DEPOSITION: INTERFACIAL CHEMISTRY AND BAND GAP FORMATION
Title (en)
DIRECT GRAPHENE GROWTH ON MGO (111) BY PHYSICAL VAPOR DEPOSITION: INTERFACIAL CHEMISTRY AND BAND GAP FORMATION
Title (de)
DIREKTES GRAPHENWACHSTUM AUF MGO (111) DURCH PHYSIKALISCHE DAMPFABLAGERUNG: GRENZFLÄCHENCHEMIE UND BANDLÜCKENBILDUNG
Title (fr)
CROISSANCE DIRECTE DE GRAPHÈNE SUR DU MGO(111) PAR DÉPOSITION EN PHASE VAPEUR PAR PROCÉDÉ PHYSIQUE : CHIMIE INTERFACIALE ET FORMATION D'UNE LARGEUR DE BANDE INTERDITE
Publication
Application
Priority
- US 201161497971 P 20110617
- US 2012042140 W 20120613
Abstract (en)
[origin: WO2012174040A1] Graphene can be grown directly on MgO(111) by industrially practical and scalable methods: free radical-assisted chemical vapor deposition (CVD), and physical vapor deposition (PVD). Single layer and double layer films can be produced by PVD, with a ~ 2 monolayer thick film as the apparent limiting thickness. C(1s) x-ray photoemission spectra (XPS) indicate that in both layers, carbon atoms are in two different oxidation states. A band gap of - 0.5 -1 eV has been observed for the two layer film. The XPS, LEED and band gap findings indicate that the graphene/MgO interface is commensurate, and that the MgO surface layer is reconstructed, resulting in carbon->MgO charge transfer. The ability to grow MgO(111) films on Si(100) or Si(111)- reported in the literature- points to a direct path to the development of graphene-based field effect transistors (FETs) and spin-FETs on MgO(111)/Si(100).
IPC 8 full level
C01B 31/04 (2006.01)
CPC (source: EP KR)
B82Y 30/00 (2013.01 - EP); B82Y 40/00 (2013.01 - EP); C01B 32/05 (2017.07 - KR); C01B 32/184 (2017.07 - EP); C30B 29/36 (2013.01 - KR); H01L 29/1606 (2013.01 - EP); C01B 2204/04 (2013.01 - EP); C01B 2204/22 (2013.01 - EP)
Citation (search report)
- [X] US 2010247801 A1 20100930 - ZENASNI AZIZ [FR]
- [XDI] SNEHA GADDAM ET AL: "FAST TRACK COMMUNICATION; Direct graphene growth on MgO: origin of the band gap", JOURNAL OF PHYSICS: CONDENSED MATTER, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 23, no. 7, 23 February 2011 (2011-02-23), pages 72204, XP020186555, ISSN: 0953-8984, DOI: 10.1088/0953-8984/23/7/072204
- [XDI] KONG L ET AL: "Graphene/substrate charge transfer characterized by inverse photoelectron spectroscopy", JOURNAL OF PHYSICAL CHEMISTRY C 20101216 AMERICAN CHEMICAL SOCIETY USA,, vol. 114, no. 49, 16 December 2010 (2010-12-16), pages 21618 - 21624, XP002733292, DOI: 10.1021/JP108616H
- See references of WO 2012174040A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2012174040 A1 20121220; EP 2720809 A1 20140423; EP 2720809 A4 20150114; KR 20140089311 A 20140714
DOCDB simple family (application)
US 2012042140 W 20120613; EP 12800366 A 20120613; KR 20137034920 A 20120613