EP 2732467 B1 20170215 - COMPACT AND ROBUST LEVEL SHIFTER LAYOUT DESIGN
Title (en)
COMPACT AND ROBUST LEVEL SHIFTER LAYOUT DESIGN
Title (de)
ENTWURF FÜR EINEN KOMPAKTEN UND ROBUSTEN PEGELSCHIEBER
Title (fr)
CONCEPTION DE TOPOLOGIE DE DÉPHASEUR DE NIVEAU COMPACT ET ROBUSTE
Publication
Application
Priority
- US 201113180598 A 20110712
- US 2012046562 W 20120712
Abstract (en)
[origin: WO2013010043A1] Method and apparatus for voltage level shifters (VLS) design in bulk CMOS technology. A multi-voltage circuit or VLS that operate with different voltage levels and that provides area and power savings for multi-bit implementation of level shifter design. A two-bit VLS to shift bits from a first voltage level logic to a second voltage level logic. The VLS formed with a first N-well in a substrate. The VLS formed with a second N-well in the substrate, adjacent to a side of the first N-well. The VLS formed with a third N-well in the substrate, adjacent to a side of the first N-well and opposite the second N-well. A first one-bit VLS circuit having a portion formed on the first Nwell and a portion formed on the second N-well. A second bit VLS circuit having a portion formed on the first N-well and a portion formed on the third N-well.
IPC 8 full level
H01L 27/02 (2006.01); H03K 19/0185 (2006.01)
CPC (source: EP US)
H01L 27/0207 (2013.01 - EP US); H03K 19/018521 (2013.01 - EP US)
Citation (examination)
US 2009108904 A1 20090430 - SHIFFER II JAMES DAVID [US]
Citation (opposition)
Opponent : Apple Inc.
- WO 2013010043 A1 20130117 - QUALCOMM INC [US], et al
- US 201113180598 A 20110712
- US 5780881 A 19980714 - MATSUDA HIROMICHI [JP], et al
- AMIR HASANBEGOVIC ET AL.: "Low- power subthreshold to above thresh- old level shifters in 90 nm and 65 nm process", MICROPROCESSORS AND MI- CROSYSTEMS, vol. 35, 1 February 2011 (2011-02-01), pages 1 - 9, XP055442703
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2013010043 A1 20130117; CN 103765581 A 20140430; CN 103765581 B 20161109; EP 2732467 A1 20140521; EP 2732467 B1 20170215; JP 2014527287 A 20141009; JP 2016171335 A 20160923; JP 5940660 B2 20160629; KR 101705707 B1 20170210; KR 20140046023 A 20140417; US 2013015882 A1 20130117; US 8487658 B2 20130716
DOCDB simple family (application)
US 2012046562 W 20120712; CN 201280041547 A 20120712; EP 12747948 A 20120712; JP 2014520346 A 20120712; JP 2016098427 A 20160517; KR 20147003557 A 20120712; US 201113180598 A 20110712