Title (en)

INGAAS PHOTODIODE ARRAY

Title (de)

INGAAS-LICHTDIODENARRAY

Title (fr)

MATRICE DE PHOTODIODES INGAAS

Publication

EP 2732473 A1 20140521 (FR)

Application

EP 12733733 A 20120711

Priority

• FR 1156290 A 20110711
• EP 2012063596 W 20120711

Abstract (en)

[origin: WO2013007753A1] The invention relates to an InGaAs photodiode array (101) and to the method for manufacturing same, wherein said array includes: a cathode including at least one indium-phosphide substrate layer (4) and an active gallium-indium arsenide layer (5); and a plurality of anodes (3) at least partially formed in the active gallium-indium arsenide layer by diffusing a P-type dopant, the interaction between an anode (3) and the cathode forming a photodiode. According to said method, an indium-phosphide passivation layer (6) is arranged on the active layer before the diffusion of the P-type dopant forming the anodes (3), and a first selective etching is performed so as to remove, over the entire thickness thereof, an area (10) of the passivation layer (6) surrounding each anode (3).

IPC 8 full level

H01L 31/042 (2014.01); H01L 31/0304 (2006.01); H01L 31/0735 (2012.01); H01L 31/103 (2006.01); H01L 31/18 (2006.01)

CPC (source: CN EP US)

H01L 27/14609 (2013.01 - CN EP US); H01L 27/14649 (2013.01 - CN EP US); H01L 27/1465 (2013.01 - CN EP US); H01L 27/14654 (2013.01 - US); H01L 27/14683 (2013.01 - US); H01L 27/14689 (2013.01 - CN EP US); H01L 27/14694 (2013.01 - CN EP US); H01L 31/1035 (2013.01 - CN EP US); H01L 31/1844 (2013.01 - CN EP US); H01L 31/1868 (2013.01 - CN EP US); Y02E 10/544 (2013.01 - US); Y02P 70/50 (2015.11 - EP US)

Citation (search report)

See references of WO 2013007753A1

Citation (examination)

US 2002011642 A1 20020131 - DRIES J CHRISTOPHER [US], et al

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

WO 2013007753 A1 20130117; CN 103703573 A 20140402; EP 2732473 A1 20140521; FR 2977982 A1 20130118; FR 2977982 B1 20140620; JP 2014521216 A 20140825; US 2014217543 A1 20140807; US 9018727 B2 20150428

DOCDB simple family (application)

EP 2012063596 W 20120711; CN 201280034301 A 20120711; EP 12733733 A 20120711; FR 1156290 A 20110711; JP 2014519537 A 20120711; US 201214131897 A 20120711