EP 2748845 A4 20150708 - WAFER STRUCTURE FOR ELECTRONIC INTEGRATED CIRCUIT MANUFACTURING
Title (en)
WAFER STRUCTURE FOR ELECTRONIC INTEGRATED CIRCUIT MANUFACTURING
Title (de)
WAFERSTRUKTUR ZUR HERSTELLUNG EINER ELEKTRONISCHEN INTEGRIERTEN SCHALTUNG
Title (fr)
STRUCTURE DE TRANCHE POUR LA FABRICATION DE CIRCUITS INTÉGRÉS ÉLECTRONIQUES
Publication
Application
Priority
- US 201113218308 A 20110825
- US 201113218273 A 20110825
- US 201113218335 A 20110825
- US 201113218345 A 20110825
- US 201113218352 A 20110825
- US 201113218292 A 20110825
- US 2012052302 W 20120824
Abstract (en)
[origin: WO2013028973A1] A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.
IPC 8 full level
H01L 21/8238 (2006.01); H01L 21/263 (2006.01); H01L 27/092 (2006.01); H01L 29/32 (2006.01); H01L 29/868 (2006.01)
CPC (source: EP)
H01L 21/187 (2013.01); H01L 21/263 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/66136 (2013.01); H01L 29/868 (2013.01)
Citation (search report)
- [Y] DE 3435464 A1 19860410 - BOSCH GMBH ROBERT [DE]
- [Y] US 4240844 A 19801223 - BARTKO JOHN [US], et al
- [Y] WO 9209099 A1 19920529 - BOSCH GMBH ROBERT [DE]
- [Y] US 2011042576 A1 20110224 - WILSON ROBIN [GB], et al
- [A] A. OCHOA ET AL: "Latch-Up Control in CMOS Integrated Circuits", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol. 26, no. 6, 1 December 1979 (1979-12-01), pages 5065 - 5068, XP055191893, ISSN: 0018-9499, DOI: 10.1109/TNS.1979.4330274
- [A] DUBUC J P ET AL: "Technological parameter and experimental set-up influences on latch-up triggering level in bulk CMOS device", RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 1993.,RADECS 93., SECOND EUROPEAN CONFERENCE ON ST. MALO, FRANCE 13-16 SEPT. 1993, NEW YORK, NY, USA,IEEE, 13 September 1993 (1993-09-13), pages 425 - 432, XP010120707, ISBN: 978-0-7803-1793-2
- [A] SCHUHMACHER H ET AL: "Quasi-monoenergetic neutron beams with energies from 25 to 70 MeV", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A: ACCELERATORS, SPECTROMETERS, DETECTORS, AND ASSOCIATED EQUIPMENT, ELSEVIER BV * NORTH-HOLLAND, NL, vol. 421, no. 1-2, 21 January 1999 (1999-01-21), pages 284 - 295, XP004153421, ISSN: 0168-9002, DOI: 10.1016/S0168-9002(98)01267-4
- See references of WO 2013028988A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2013028973 A1 20130228; EP 2748844 A1 20140702; EP 2748844 A4 20151104; EP 2748845 A1 20140702; EP 2748845 A4 20150708; EP 2748846 A1 20140702; EP 2748846 A4 20151111; EP 2748847 A1 20140702; EP 2748847 A4 20160601; EP 2748848 A1 20140702; EP 2748848 A4 20150610; EP 2748849 A2 20140702; EP 2748849 A4 20151216; WO 2013028976 A1 20130228; WO 2013028983 A1 20130228; WO 2013028986 A1 20130228; WO 2013028988 A1 20130228; WO 2013081694 A2 20130606; WO 2013081694 A3 20131024
DOCDB simple family (application)
US 2012052269 W 20120824; EP 12825109 A 20120824; EP 12825755 A 20120824; EP 12825811 A 20120824; EP 12826159 A 20120824; EP 12826508 A 20120824; EP 12854047 A 20120824; US 2012052264 W 20120824; US 2012052280 W 20120824; US 2012052293 W 20120824; US 2012052299 W 20120824; US 2012052302 W 20120824