EP 2748848 A4 20150610 - WAFER STRUCTURE FOR ELECTRONIC INTEGRATED CIRCUIT MANUFACTURING

Title (en)

WAFER STRUCTURE FOR ELECTRONIC INTEGRATED CIRCUIT MANUFACTURING

Title (de)

WAFERSTRUKTUR ZUR HERSTELLUNG EINER ELEKTRONISCHEN INTEGRIERTEN SCHALTUNG

Title (fr)

STRUCTURE DE TRANCHE POUR LA FABRICATION DE CIRCUITS INTÉGRÉS ÉLECTRONIQUES

Publication

EP 2748848 A4 20150610 (EN)

Application

EP 12826508 A 20120824

Priority

US 201113218308 A 20110825
US 201113218273 A 20110825
US 201113218335 A 20110825
US 201113218345 A 20110825
US 201113218352 A 20110825
US 201113218292 A 20110825
US 2012052269 W 20120824

Abstract (en)

[origin: WO2013028973A1] A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.

IPC 8 full level

H01L 21/18 (2006.01); H01L 21/329 (2006.01); H01L 21/8238 (2006.01); H01L 29/32 (2006.01); H01L 29/868 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01)

CPC (source: EP)

H01L 21/187 (2013.01); H01L 21/263 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/66136 (2013.01); H01L 29/868 (2013.01)

Citation (search report)

[XI] WO 9209099 A1 19920529 - BOSCH GMBH ROBERT [DE]
[XI] US 2009185316 A1 20090723 - SCHNEIDER JENS [DE], et al
[XI] EP 0889509 A2 19990107 - HARRIS CORP [US]
[XI] EP 0327316 A2 19890809 - TOSHIBA KK [JP]
[XI] JP 2008211148 A 20080911 - FUJI ELEC DEVICE TECH CO LTD
[X] EP 0405422 A1 19910102 - IXYS CORP [US]
[A] US 2011042576 A1 20110224 - WILSON ROBIN [GB], et al
[A] US 5466303 A 19951114 - YAMAGUCHI HITOSHI [JP], et al
[A] DUSSAULT H ET AL: "High energy heavy-ion-induced single event transients in epitaxial structures", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 41, no. 6, 1 December 1994 (1994-12-01), pages 2018 - 2025, XP011386325, ISSN: 0018-9499, DOI: 10.1109/23.340537
See references of WO 2013028973A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

WO 2013028973 A1 20130228; EP 2748844 A1 20140702; EP 2748844 A4 20151104; EP 2748845 A1 20140702; EP 2748845 A4 20150708; EP 2748846 A1 20140702; EP 2748846 A4 20151111; EP 2748847 A1 20140702; EP 2748847 A4 20160601; EP 2748848 A1 20140702; EP 2748848 A4 20150610; EP 2748849 A2 20140702; EP 2748849 A4 20151216; WO 2013028976 A1 20130228; WO 2013028983 A1 20130228; WO 2013028986 A1 20130228; WO 2013028988 A1 20130228; WO 2013081694 A2 20130606; WO 2013081694 A3 20131024

DOCDB simple family (application)

US 2012052269 W 20120824; EP 12825109 A 20120824; EP 12825755 A 20120824; EP 12825811 A 20120824; EP 12826159 A 20120824; EP 12826508 A 20120824; EP 12854047 A 20120824; US 2012052264 W 20120824; US 2012052280 W 20120824; US 2012052293 W 20120824; US 2012052299 W 20120824; US 2012052302 W 20120824