EP 2774174 A2 20140910 - STRUCTURES INCORPORATING SILICON NANOPARTICLE INKS, DENSIFIED SILICON MATERIALS FROM NANOPARTICLE SILICON DEPOSITS AND CORRESPONDING METHODS
Title (en)
STRUCTURES INCORPORATING SILICON NANOPARTICLE INKS, DENSIFIED SILICON MATERIALS FROM NANOPARTICLE SILICON DEPOSITS AND CORRESPONDING METHODS
Title (de)
STRUKTUREN MIT SILIZIUMNANOPARTIKELTINTEN, VERDICHTETE SILICIUMMATERIALIEN AUS NANOPARTIKELSILICIUMABLAGERUNGEN UND ENTSPRECHENDE VERFAHREN
Title (fr)
STRUCTURES RENFERMANT DES ENCRES À NANOPARTICULES DE SILICIUM, MATÉRIAUX DE SILICIUM DENSIFIÉ ISSUS DE DÉPÔTS DE SILICIUM EN NANOPARTICULES ET PROCÉDÉS CORRESPONDANTS
Publication
Application
Priority
- US 201113286888 A 20111101
- US 2012061456 W 20121023
Abstract (en)
[origin: US2013105806A1] Silicon nanoparticle inks provide a basis for the formation of desirable materials. Specifically, composites have been formed in thin layers comprising silicon nanoparticles embedded in an amorphous silicon matrix, which can be formed at relatively low temperatures. The composite material can be heated to form a nanocrystalline material having crystals that are non-rod shaped. The nanocrystalline material can have desirable electrical conductive properties, and the materials can be formed with a high dopant level. Also, nanocrystalline silicon pellets can be formed from silicon nanoparticles deposited form an ink in which the pellets can be relatively dense although less dense than bulk silicon. The pellets can be formed from the application of pressure and heat to a silicon nanoparticle layer.
IPC 8 full level
H01L 21/20 (2006.01); H01L 21/208 (2006.01); H01L 21/225 (2006.01)
CPC (source: EP KR US)
H01L 21/02104 (2013.01 - US); H01L 21/02532 (2013.01 - EP US); H01L 21/0259 (2013.01 - EP US); H01L 21/02601 (2013.01 - EP KR US); H01L 21/0262 (2013.01 - EP KR US); H01L 21/02628 (2013.01 - EP KR US); H01L 21/2225 (2013.01 - EP US); H01L 21/2257 (2013.01 - EP KR US); H01L 21/67115 (2013.01 - EP US); H01L 29/04 (2013.01 - US); H01L 31/0216 (2013.01 - KR); H01L 31/028 (2013.01 - EP KR US); H01L 31/035218 (2013.01 - EP KR US); H01L 31/068 (2013.01 - EP US); H01L 31/0682 (2013.01 - EP KR US); H01L 31/1804 (2013.01 - EP KR US); Y02E 10/547 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
US 2013105806 A1 20130502; EP 2774174 A2 20140910; EP 2774174 A4 20150729; JP 2015505791 A 20150226; KR 20150000466 A 20150102; TW 201334197 A 20130816; US 2014151706 A1 20140605; WO 2013066669 A2 20130510; WO 2013066669 A3 20130801
DOCDB simple family (application)
US 201113286888 A 20111101; EP 12846610 A 20121023; JP 2014539982 A 20121023; KR 20147014613 A 20121023; TW 101140598 A 20121101; US 2012061456 W 20121023; US 201414175561 A 20140207