EP 2780945 A1 20140924 - OPTICAL TILTED CHARGE DEVICES AND METHODS
Title (en)
OPTICAL TILTED CHARGE DEVICES AND METHODS
Title (de)
OPTISCHE GENEIGTE LADEVORRICHTUNGEN UND VERFAHREN
Title (fr)
DISPOSITIFS ET PROCÉDÉS DE CHARGE INCLINÉE OPTIQUE
Publication
Application
Priority
- US 201161629181 P 20111114
- US 201161629175 P 20111114
- US 2012064778 W 20121113
Abstract (en)
[origin: WO2013074496A1] A method for producing optical signals with improved efficiency, including the following steps: providing a layered semiconductor structure that includes a substrate, a semiconductor collector region of a first conductivity type, a semiconductor base region of a second conductivity type disposed on the collector region, and a semiconductor emitter region of the first semiconductor type disposed as a mesa over a portion of a surface of the base region; providing, in the base region, at least one region exhibiting quantum size effects; providing collector, base, and emitter electrodes, respectively coupled with the collector, base and emitter regions; providing a tunnel barrier layer over at least the exposed portion of the surface of the base region; and applying signals with respect to the collector, base, and emitter electrodes to produce optical signals from the base region. Also disclosed is an optical tilted charge device with an InGaAsN quantum well.
IPC 8 full level
H01L 29/737 (2006.01); H01L 29/778 (2006.01); H01L 33/00 (2010.01); H01S 5/062 (2006.01)
CPC (source: CN EP)
H01L 33/0016 (2013.01 - CN EP); H01L 33/06 (2013.01 - CN EP)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
WO 2013074496 A1 20130523; CN 103930994 A 20140716; EP 2780945 A1 20140924; EP 2780945 A4 20151104; TW 201332238 A 20130801
DOCDB simple family (application)
US 2012064778 W 20121113; CN 201280055790 A 20121113; EP 12850478 A 20121113; TW 101142506 A 20121114