Global Patent Index - EP 2783391 A1

EP 2783391 A1 20141001 - METHOD FOR MAKING CONTACT WITH A SEMICONDUCTOR AND CONTACT ARRANGEMENT FOR A SEMICONDUCTOR

Title (en)

METHOD FOR MAKING CONTACT WITH A SEMICONDUCTOR AND CONTACT ARRANGEMENT FOR A SEMICONDUCTOR

Title (de)

VERFAHREN ZUM KONTAKTIEREN EINES HALBLEITERS UND KONTAKTANORDNUNG FÜR EINEN HALBLEITER

Title (fr)

PROCÉDÉ POUR METTRE EN CONTACT UN SEMI-CONDUCTEUR ET DISPOSITIF DE MISE EN CONTACT DESTINÉ À UN SEMI-CONDUCTEUR

Publication

EP 2783391 A1 20141001 (DE)

Application

EP 12797791 A 20121120

Priority

  • DE 102011086687 A 20111121
  • EP 2012073074 W 20121120

Abstract (en)

[origin: WO2013076064A1] The invention relates to a method for making contact with a semiconductor (10), and to a contact arrangement (1) for a semiconductor (10), wherein the semiconductor (10) is areally connected to a first contact partner (20) at at least one first area by the formation of a first soldering layer (30) having a predefined thickness. According to the invention, a polyimide layer (14) is applied as delimiting means on the semiconductor (10), said polyimide layer predefining the dimensions and/or the form of at least one soldering area (12) of the semiconductor (10).

IPC 8 full level

H01L 21/60 (2006.01); H01L 23/48 (2006.01); H01L 23/495 (2006.01)

CPC (source: CN EP US)

H01L 21/768 (2013.01 - US); H01L 23/49838 (2013.01 - US); H01L 24/27 (2013.01 - CN EP US); H01L 24/32 (2013.01 - CN EP US); H01L 24/33 (2013.01 - CN EP US); H01L 24/36 (2013.01 - US); H01L 24/37 (2013.01 - CN EP US); H01L 24/40 (2013.01 - EP US); H01L 23/49513 (2013.01 - CN EP US); H01L 23/49524 (2013.01 - CN EP US); H01L 24/29 (2013.01 - CN EP US); H01L 24/84 (2013.01 - EP); H01L 2224/26145 (2013.01 - CN EP US); H01L 2224/27013 (2013.01 - CN EP US); H01L 2224/29101 (2013.01 - CN EP US); H01L 2224/32225 (2013.01 - CN EP US); H01L 2224/32245 (2013.01 - CN EP US); H01L 2224/33181 (2013.01 - CN EP US); H01L 2224/352 (2013.01 - CN EP US); H01L 2224/37011 (2013.01 - EP US); H01L 2224/37012 (2013.01 - CN EP US); H01L 2224/371 (2013.01 - CN EP US); H01L 2224/4007 (2013.01 - EP US); H01L 2224/40245 (2013.01 - EP US); H01L 2224/49171 (2013.01 - CN EP US); H01L 2224/83801 (2013.01 - EP US); H01L 2224/84801 (2013.01 - EP US); H01L 2924/00014 (2013.01 - EP); H01L 2924/1305 (2013.01 - CN EP US); H01L 2924/13055 (2013.01 - CN EP US); H01L 2924/1306 (2013.01 - CN EP US); H01L 2924/13091 (2013.01 - CN EP US)

C-Set (source: CN EP US)

CN

  1. H01L 2224/27013 + H01L 2924/07025
  2. H01L 2224/29101 + H01L 2924/014
  3. H01L 2224/371 + H01L 2924/00014
  4. H01L 2924/1306 + H01L 2924/00
  5. H01L 2924/1305 + H01L 2924/00

EP

  1. H01L 2224/27013 + H01L 2924/07025
  2. H01L 2224/29101 + H01L 2924/014
  3. H01L 2224/371 + H01L 2924/00014
  4. H01L 2924/1306 + H01L 2924/00
  5. H01L 2924/1305 + H01L 2924/00
  6. H01L 2224/84801 + H01L 2924/00014
  7. H01L 2224/83801 + H01L 2924/00014
  8. H01L 2924/00014 + H01L 2224/37099
  9. H01L 2924/00014 + H01L 2224/73221

US

  1. H01L 2224/27013 + H01L 2924/07025
  2. H01L 2224/29101 + H01L 2924/014
  3. H01L 2224/371 + H01L 2924/00014
  4. H01L 2924/1306 + H01L 2924/00
  5. H01L 2924/1305 + H01L 2924/00
  6. H01L 2224/84801 + H01L 2924/00014
  7. H01L 2224/83801 + H01L 2924/00014

Citation (search report)

See references of WO 2013076064A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

DE 102011086687 A1 20130523; CN 103959449 A 20140730; CN 103959449 B 20170630; EP 2783391 A1 20141001; US 2014299998 A1 20141009; US 9281270 B2 20160308; WO 2013076064 A1 20130530

DOCDB simple family (application)

DE 102011086687 A 20111121; CN 201280057174 A 20121120; EP 12797791 A 20121120; EP 2012073074 W 20121120; US 201214359630 A 20121120