EP 2793266 B1 20201111 - METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
Title (en)
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
Title (de)
HERSTELLUNGSVERFAHREN EINES HALBLEITERBAUELEMENTS
Title (fr)
PROCÉDÉ DE FABRICATION D'UN DISPOSITIF SEMI-CONDUCTEUR
Publication
Application
Priority
- JP 2011274902 A 20111215
- JP 2012082582 W 20121214
Abstract (en)
[origin: US2014246750A1] Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n− drift layer, forming an n-type FS layer having lower resistance than the n-type semiconductor substrate in the rear surface of the n− drift layer. When the proton irradiation is performed a plurality of times, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder which remains after the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder is reduced and it is possible to prevent deterioration of characteristics, such as increase in leakage current. It is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.
IPC 8 full level
H01L 29/739 (2006.01); H01L 21/263 (2006.01); H01L 21/265 (2006.01); H01L 21/329 (2006.01); H01L 21/336 (2006.01); H01L 29/32 (2006.01); H01L 29/78 (2006.01); H01L 29/868 (2006.01)
CPC (source: CN EP KR US)
H01L 21/263 (2013.01 - CN EP US); H01L 21/265 (2013.01 - KR); H01L 21/324 (2013.01 - KR); H01L 21/326 (2013.01 - KR); H01L 29/0615 (2013.01 - US); H01L 29/1095 (2013.01 - US); H01L 29/32 (2013.01 - CN EP US); H01L 29/36 (2013.01 - US); H01L 29/6609 (2013.01 - US); H01L 29/66333 (2013.01 - US); H01L 29/66348 (2013.01 - CN EP US); H01L 29/70 (2013.01 - KR); H01L 29/739 (2013.01 - KR); H01L 29/7395 (2013.01 - US); H01L 29/7397 (2013.01 - CN EP US); H01L 29/78 (2013.01 - KR); H01L 29/861 (2013.01 - US); H01L 29/868 (2013.01 - KR)
Citation (examination)
US 2015179441 A1 20150625 - ONOZAWA YUICHI [JP]
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
US 2014246750 A1 20140904; US 9368577 B2 20160614; CN 103946983 A 20140723; CN 103946983 B 20170531; CN 107195677 A 20170922; CN 107195677 B 20210205; EP 2793266 A1 20141022; EP 2793266 A4 20150722; EP 2793266 B1 20201111; JP 2015130523 A 20150716; JP 5741712 B2 20150701; JP 6172184 B2 20170802; JP WO2013089256 A1 20150427; KR 101702942 B1 20170206; KR 101825500 B1 20180205; KR 20140101733 A 20140820; KR 20160122864 A 20161024; US 10056449 B2 20180821; US 10199453 B2 20190205; US 10651269 B2 20200512; US 2016268366 A1 20160915; US 2017345888 A1 20171130; US 2018331176 A1 20181115; US 2019181221 A1 20190613; US 9722016 B2 20170801; WO 2013089256 A1 20130620
DOCDB simple family (application)
US 201414276560 A 20140513; CN 201280056282 A 20121214; CN 201710307511 A 20121214; EP 12857108 A 20121214; JP 2012082582 W 20121214; JP 2013549339 A 20121214; JP 2015046521 A 20150309; KR 20147012992 A 20121214; KR 20167028809 A 20121214; US 201615156427 A 20160517; US 201715662601 A 20170728; US 201816045038 A 20180725; US 201916266229 A 20190204