EP 2797110 A1 20141029 - INSULATION-LAYER MATERIAL FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
Title (en)
INSULATION-LAYER MATERIAL FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
Title (de)
ISOLATIONSSCHICHTENMATERIAL FÜR EINE ELEKTRONISCHE VORRICHTUNG UND ELEKTRONISCHE VORRICHTUNG
Title (fr)
MATÉRIAU DE COUCHE ISOLANTE POUR DISPOSITIF ÉLECTRONIQUE, ET DISPOSITIF ÉLECTRONIQUE
Publication
Application
Priority
- JP 2011280187 A 20111221
- JP 2012082221 W 20121212
Abstract (en)
An object of the present invention is to provide an electronic device insulating layer material capable of forming an insulating layer at low temperature. A solution to the problem is an electronic device insulating layer material comprising: a polymer compound (A) which contains a repeating unit containing a cyclic ether structure and a repeating unit represented by the formula: wherein R 5 represents a hydrogen atom or a methyl group; R bb represents a linking moiety which links the main chain of the polymer compound with a side chain of the polymer compound and optionally has a fluorine atom; R represents an organic group capable of being detached by an acid; R' represents a hydrogen atom or a monovalent organic group having from 1 to 20 carbon atoms and optionally having a fluorine atoms; the suffix b represents an integer of 0 or 1, and the suffix n represents an integer of from 1 to 5; when there are two or more Rs, they may be the same or different; and when there are two or more R's, they may be the same or different; and tungsten (V) alkoxide (B).
IPC 8 full level
H01L 21/312 (2006.01); C08K 5/00 (2006.01); C08K 5/057 (2006.01); C08L 25/18 (2006.01); H01B 3/44 (2006.01); H01L 21/283 (2006.01); H01L 21/336 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 29/786 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01); H01L 51/30 (2006.01); H01L 51/50 (2006.01); H05B 33/22 (2006.01)
CPC (source: CN EP KR US)
C08F 212/22 (2020.02 - KR); C08F 220/325 (2020.02 - KR); C08F 220/343 (2020.02 - KR); C08F 220/44 (2013.01 - KR); H01B 3/442 (2013.01 - EP KR US); H01B 3/447 (2013.01 - EP US); H01B 3/448 (2013.01 - EP KR US); H10K 10/466 (2023.02 - US); H10K 10/471 (2023.02 - EP US); H10K 85/113 (2023.02 - CN EP US); H10K 85/141 (2023.02 - CN EP US); H10K 85/151 (2023.02 - CN EP US); C08F 12/22 (2013.01 - US); C08F 212/22 (2020.02 - EP US); H10K 10/476 (2023.02 - CN EP US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
EP 2797110 A1 20141029; EP 2797110 A4 20150826; EP 2797110 B1 20180228; CN 104040700 A 20140910; CN 104040700 B 20160907; JP 2013131634 A 20130704; JP 6025326 B2 20161116; KR 20140107262 A 20140904; TW 201336948 A 20130916; US 2015236281 A1 20150820; US 9362512 B2 20160607; WO 2013094495 A1 20130627
DOCDB simple family (application)
EP 12858973 A 20121212; CN 201280063670 A 20121212; JP 2011280187 A 20111221; JP 2012082221 W 20121212; KR 20147016441 A 20121212; TW 101148012 A 20121218; US 201214364376 A 20121212