EP 2799596 A4 20151216 - SILICA GLASS CRUCIBLE AND METHOD FOR PRODUCING MONOCRYSTALLINE SILICON USING SAME

Title (en)

SILICA GLASS CRUCIBLE AND METHOD FOR PRODUCING MONOCRYSTALLINE SILICON USING SAME

Title (de)

QUARZGLASTIEGEL UND VERFAHREN ZUR HERSTELLUNG VON MONOKRISTALLINEM SILICIUM DAMIT

Title (fr)

CREUSET EN VERRE DE SILICE ET PROCÉDÉ DE PRODUCTION DE SILICIUM MONOCRISTALLIN

Publication

EP 2799596 A4 20151216 (EN)

Application

EP 12861496 A 20121031

Priority

JP 2011290479 A 20111230
JP 2011290480 A 20111230
JP 2012078258 W 20121031

Abstract (en)

[origin: EP2799596A1] Buckling of a vitreous silica crucible or fall of a sidewall into the crucible is effectively suppressed. Furthermore, dislocations in a silicon single crystal are suppressed to enhance the yield of the single crystal. The vitreous silica crucible is used to pull single-crystal silicon and includes the cylindrical sidewall having an upward-opening rim, a mortar-shaped bottom including a curve, and a round portion connecting the sidewall and the bottom. The round portion is provided in such a manner that the curvature of the inner surface thereof is gradually increased from the sidewall toward the bottom in a section passing through the rotation axis of the vitreous silica crucible.

IPC 8 full level

C03B 20/00 (2006.01); C30B 15/10 (2006.01); C30B 29/06 (2006.01)

CPC (source: EP US)

C30B 15/10 (2013.01 - EP US); C30B 15/20 (2013.01 - US); C30B 29/06 (2013.01 - EP US); Y10T 117/1032 (2015.01 - EP US)

Citation (search report)

[Y] EP 2075354 A2 20090701 - JAPAN SUPER QUARTZ CORP [JP]
[Y] JP H0165866 U 19890427
[A] JP H10158089 A 19980616 - MITSUBISHI MATERIAL SILICON, et al
See references of WO 2013099432A1

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

EP 2799596 A1 20141105; EP 2799596 A4 20151216; EP 2799596 B1 20180822; CN 104114753 A 20141022; CN 104114753 B 20171010; KR 101623176 B1 20160520; KR 20140108578 A 20140911; TW 201333278 A 20130816; TW I518216 B 20160121; US 10266961 B2 20190423; US 2014352606 A1 20141204; WO 2013099432 A1 20130704

DOCDB simple family (application)

EP 12861496 A 20121031; CN 201280065350 A 20121031; JP 2012078258 W 20121031; KR 20147020938 A 20121031; TW 101140631 A 20121101; US 201214369159 A 20121031