EP 2822002 A1 20150107 - METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM THERMISTOR SENSOR
Title (en)
METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM THERMISTOR SENSOR
Title (de)
METALLNITRIDMATERIAL FÜR THERMISTOR, HERSTELLUNGSVERFAHREN DAFÜR UND FILMTHERMISTORSENSOR
Title (fr)
MATÉRIAU À BASE DE NITRURE MÉTALLIQUE POUR THERMISTANCE, SON PROCÉDÉ DE PRODUCTION, ET CAPTEUR DE THERMISTANCE DE TYPE FILM
Publication
Application
Priority
- JP 2012041967 A 20120228
- JP 2013055601 W 20130221
Abstract (en)
Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: Ti x Al y (N 1-w O w ) z (where 0.70 ‰¤ y/(x+y) ‰¤ 0.95, 0.45 ‰¤ z ‰¤0.55, 0 < w ‰¤ 0.35, and x+y+z = 1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.
IPC 8 full level
H01C 7/04 (2006.01); C23C 14/00 (2006.01); C23C 14/06 (2006.01); C30B 25/06 (2006.01); C30B 29/38 (2006.01); G01K 7/22 (2006.01); H01C 7/00 (2006.01); H01C 7/02 (2006.01)
CPC (source: EP US)
C23C 14/0036 (2013.01 - US); C23C 14/0641 (2013.01 - US); C30B 29/38 (2013.01 - US); G01K 7/22 (2013.01 - US); H01C 7/008 (2013.01 - EP US); H01C 7/04 (2013.01 - EP US); H01C 7/041 (2013.01 - EP US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 2822002 A1 20150107; EP 2822002 A4 20160210; EP 2822002 B1 20170329; CN 104040647 A 20140910; CN 104040647 B 20170308; IN 7101DEN2014 A 20150424; JP 2013179162 A 20130909; JP 5477671 B2 20140423; KR 101871547 B1 20180626; KR 20140138658 A 20141204; TW 201345868 A 20131116; TW I564270 B 20170101; US 2015023394 A1 20150122; US 9852829 B2 20171226; WO 2013129638 A1 20130906
DOCDB simple family (application)
EP 13754695 A 20130221; CN 201380004775 A 20130221; IN 7101DEN2014 A 20140822; JP 2012041967 A 20120228; JP 2013055601 W 20130221; KR 20147023893 A 20130221; TW 102106583 A 20130225; US 201314380791 A 20130221