EP 2822027 A3 20150429 - Method for manufacturing a double-gate electronic memory cell and related memory cell
Title (en)
Method for manufacturing a double-gate electronic memory cell and related memory cell
Title (de)
Herstellungsverfahren einer elektronischen Speicherzelle mit Doppel-Gate, und entsprechende Speicherzelle
Title (fr)
Procédé de fabrication d'une cellule mémoire électronique à double grille et cellule mémoire associée
Publication
Application
Priority
FR 1356619 A 20130705
Abstract (en)
[origin: US2015008509A1] A method of manufacturing a double-gate electronic memory cell is presented. The cell includes a substrate; a first gate structure, with the first gate structure having a lateral flank; a stack including several layers and of which a layer is able to store electrical charges, the stack covering the lateral flank of the first gate structure and a portion of the substrate; and a second gate structure. The second gate structure includes a first portion formed from a first gate material; a second portion formed from a second gate material, with the first gate material able to be etched selectively in relation to the second gate material and with the second gate material able to be etched selectively in relation to the first gate material; a first zone of silicidation extending over the first portion of the second gate structure; and a second zone of silicidation extending over the second portion of the second gate structure.
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/336 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01)
CPC (source: EP US)
H01L 29/40117 (2019.07 - EP US); H01L 29/42344 (2013.01 - EP US); H01L 29/66833 (2013.01 - EP US); H01L 29/7831 (2013.01 - US); H01L 29/792 (2013.01 - EP US); H10B 43/00 (2023.02 - US)
Citation (search report)
- [A] DE 102010037120 A1 20110428 - INFINEON TECHNOLOGIES AG [DE]
- [A] US 2011001179 A1 20110106 - YANAGI ITARU [JP], et al
- [A] US 2010078706 A1 20100401 - MATSUDA TOMOKO [JP]
- [A] US 2012299084 A1 20121129 - SAITO KENTARO [JP], et al
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 2822027 A2 20150107; EP 2822027 A3 20150429; FR 3008229 A1 20150109; FR 3008229 B1 20161209; US 2015008509 A1 20150108; US 9117702 B2 20150825
DOCDB simple family (application)
EP 14175540 A 20140703; FR 1356619 A 20130705; US 201414323781 A 20140703