EP 2831878 A1 20150204 - BIT LINE PRECHARGING SCHEME FOR NONVOLATILE MEMORY WITH SHARED BIT LINES
Title (en)
BIT LINE PRECHARGING SCHEME FOR NONVOLATILE MEMORY WITH SHARED BIT LINES
Title (de)
BITLEITUNGSVORLADUNGSSCHEMA FÜR NICHTFLÜCHTIGEN SPEICHER MIT GETEILTEN BITLEITUNGEN
Title (fr)
SCHÉMA DE PRÉCHARGE DE LIGNES DE BITS POUR MÉMOIRE NON VOLATILE À LIGNES DE BITS PARTAGÉES
Publication
Application
Priority
- US 201213429851 A 20120326
- US 2012066911 W 20121128
Abstract (en)
[origin: US2013250687A1] Methods for operating a non-volatile storage system utilizing a shared-bit-line NAND architecture are described. A shared-bit-line NAND architecture includes one or more pairs of NAND strings, wherein each pair of the one or more pairs of NAND strings shares a common bit line. In some embodiments, a pair of NAND strings includes an odd NAND string adjacent to an even NAND string. Prior to programming a memory cell associated with the even NAND string, an odd channel associated with the odd NAND string (i.e., the NAND string of the pair that is not selected for programming) is precharged to a bit line inhibit voltage, floated, and then boosted to a second voltage greater than the bit line inhibit voltage as an even channel associated with the even NAND string is precharged. Subsequently, the odd channel may be boosted (e.g., via self-boosting) prior to programming the memory cell.
IPC 8 full level
G11C 7/12 (2006.01); G11C 16/04 (2006.01); G11C 16/24 (2006.01)
CPC (source: EP KR US)
G11C 7/12 (2013.01 - EP KR US); G11C 16/04 (2013.01 - KR US); G11C 16/0483 (2013.01 - EP KR US); G11C 16/24 (2013.01 - EP KR US); G11C 16/26 (2013.01 - KR); G11C 16/3427 (2013.01 - KR)
Citation (search report)
See references of WO 2013147939A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
US 2013250687 A1 20130926; US 8902659 B2 20141202; EP 2831878 A1 20150204; EP 2831878 B1 20160511; KR 101842322 B1 20180326; KR 20150008377 A 20150122; WO 2013147939 A1 20131003
DOCDB simple family (application)
US 201213429851 A 20120326; EP 12798127 A 20121128; KR 20147023767 A 20121128; US 2012066911 W 20121128