EP 2831905 A1 20150204 - SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A GLASS-LIKE LAYER
Title (en)
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A GLASS-LIKE LAYER
Title (de)
HALBLEITERVORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG EINER GLASARTIGEN SCHICHT
Title (fr)
DISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ DE PRODUCTION D'UNE COUCHE VITREUSE
Publication
Application
Priority
- US 201261617709 P 20120330
- EP 2013056950 W 20130402
Abstract (en)
[origin: WO2013144375A1] The invention discloses a method for producing a glass-like layer (3) on a substrate, such as a power semiconductor substrate (1), consisting of a glass-like vapour deposition coating material by means of plasma-assisted electron beam vapour deposition. An electronic construction element can be produced using this method.
IPC 8 full level
H01L 21/02 (2006.01); H01L 21/316 (2006.01)
CPC (source: CN EP KR US)
C23C 14/0652 (2013.01 - KR US); C23C 14/081 (2013.01 - CN EP US); C23C 14/10 (2013.01 - CN EP KR US); C23C 14/30 (2013.01 - CN EP US); C23C 14/505 (2013.01 - CN EP US); H01L 21/02129 (2013.01 - CN EP KR US); H01L 21/02167 (2013.01 - KR US); H01L 21/02178 (2013.01 - KR US); H01L 21/02269 (2013.01 - CN EP KR US); H01L 21/2855 (2013.01 - CN EP US); H01L 21/56 (2013.01 - US); H01L 23/291 (2013.01 - US); H01L 23/3157 (2013.01 - CN EP US); H01L 23/564 (2013.01 - US); H01L 2924/0002 (2013.01 - CN EP US)
Citation (search report)
See references of WO 2013144375A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2013144375 A1 20131003; CN 104380432 A 20150225; EP 2831905 A1 20150204; JP 2015518519 A 20150702; KR 20140143214 A 20141215; US 2015014866 A1 20150115
DOCDB simple family (application)
EP 2013056950 W 20130402; CN 201380017950 A 20130402; EP 13718805 A 20130402; JP 2015502384 A 20130402; KR 20147030616 A 20130402; US 201414500054 A 20140929