EP 2831916 A1 20150204 - SONOS STACK WITH SPLIT NITRIDE MEMORY LAYER
Title (en)
SONOS STACK WITH SPLIT NITRIDE MEMORY LAYER
Title (de)
SONOS-STAPEL MIT GETEILTER NITRIDSPEICHERSCHICHT
Title (fr)
PILE DE SONOS AVEC COUCHE DE MÉMOIRE AU NITRURE FENDUE
Publication
Application
Priority
- US 201213431069 A 20120327
- US 2013029784 W 20130308
Abstract (en)
[origin: WO2013148112A1] Embodiments of a non-planar memory device including a split charge-trapping region and methods of forming the same are described. Generally, the device comprises: a channel formed from a thin film of semiconducting material overlying a surface on a substrate connecting a source and a drain of the memory device; a tunnel oxide overlying the channel; a split charge-trapping region overlying the tunnel oxide, the split charge-trapping region including a bottom charge-trapping layer comprising a nitride closer to the tunnel oxide, and a top charge-trapping layer, wherein the bottom charge-trapping layer is separated from the top charge-trapping layer by a thin anti-tunneling layer comprising an oxide. Other embodiments are also disclosed.
IPC 8 full level
H01L 29/792 (2006.01); H01L 21/28 (2006.01); H01L 27/115 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01)
CPC (source: CN EP KR)
B82Y 10/00 (2013.01 - EP); H01L 29/0673 (2013.01 - EP KR); H01L 29/0676 (2013.01 - EP KR); H01L 29/40117 (2019.07 - EP KR); H01L 29/42348 (2013.01 - EP KR); H01L 29/513 (2013.01 - CN EP KR); H01L 29/518 (2013.01 - CN EP KR); H01L 29/66439 (2013.01 - EP KR); H01L 29/66833 (2013.01 - CN EP KR); H01L 29/775 (2013.01 - EP KR); H01L 29/78 (2013.01 - KR); H01L 29/792 (2013.01 - CN EP); H01L 29/7926 (2013.01 - CN EP KR); H10B 43/27 (2023.02 - EP KR); B82Y 10/00 (2013.01 - KR); H01L 29/785 (2013.01 - EP)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2013148112 A1 20131003; CN 104254921 A 20141231; CN 104254921 B 20200612; EP 2831916 A1 20150204; EP 2831916 A4 20151028; EP 3534408 A1 20190904; JP 2015517211 A 20150618; JP 6422430 B2 20181114; KR 102061253 B1 20191231; KR 102352542 B1 20220118; KR 20140147083 A 20141229; KR 20200003425 A 20200109; TW 201349505 A 20131201; TW 201724527 A 20170701; TW I581432 B 20170501; TW I615982 B 20180221
DOCDB simple family (application)
US 2013029784 W 20130308; CN 201380016882 A 20130308; EP 13767277 A 20130308; EP 18213110 A 20130308; JP 2015503236 A 20130308; KR 20147024659 A 20130308; KR 20197038212 A 20130308; TW 102110016 A 20130321; TW 106107952 A 20130321