EP 2833421 B1 20181212 - Semiconductor light emitting device and method for manufacturing same
Title (en)
Semiconductor light emitting device and method for manufacturing same
Title (de)
Lichtemittierendes Halbleiterbauelement und Herstellungsverfahren
Title (fr)
Dispositif électroluminescent semi-conducteur et son procédé de fabrication
Publication
Application
Priority
JP 2013159346 A 20130731
Abstract (en)
[origin: EP2833421A1] According to one embodiment, the optical layer has a larger planar size than the semiconductor layer. The optical layer is transmissive to emission light of the light emitting layer. The first insulating film is provided on a side surface of the semiconductor layer continued from the first surface. The metal film includes a first reflective part covering the side surface of the semiconductor layer via the first insulating film. The metal film includes a second reflective part opposed to the optical layer in a region around the side surface of the semiconductor layer and extending from the first reflective part toward a side opposite from the side surface of the semiconductor layer.
IPC 8 full level
H01L 33/48 (2010.01); H01L 33/46 (2010.01)
CPC (source: EP KR US)
H01L 33/44 (2013.01 - KR); H01L 33/46 (2013.01 - EP KR US); H01L 33/486 (2013.01 - EP KR US); H01L 33/50 (2013.01 - KR US); H01L 33/60 (2013.01 - KR US); H01L 33/44 (2013.01 - EP US); H01L 2933/0033 (2013.01 - EP KR US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
EP 2833421 A1 20150204; EP 2833421 B1 20181212; HK 1204388 A1 20151113; JP 2015032621 A 20150216; JP 6045999 B2 20161214; KR 20150015345 A 20150210; TW 201505212 A 20150201; TW I529970 B 20160411; US 2015034985 A1 20150205; US 9172016 B2 20151027
DOCDB simple family (application)
EP 14150911 A 20140113; HK 15104716 A 20150518; JP 2013159346 A 20130731; KR 20130147606 A 20131129; TW 102143224 A 20131127; US 201414153160 A 20140113