EP 2834189 B1 20210728 - OPTOELECTRONIC SEMICONDUCTING STRUCTURE WITH NANOWIRES AND METHOD OF FABRICATING SUCH A STRUCTURE
Title (en)
OPTOELECTRONIC SEMICONDUCTING STRUCTURE WITH NANOWIRES AND METHOD OF FABRICATING SUCH A STRUCTURE
Title (de)
OPTOELEKTRONISCHE HALBLEITERSTRUKTUR MIT NANODRÄHTEN UND VERFAHREN ZUR HERSTELLUNG EINER SOLCHEN STRUKTUR
Title (fr)
STRUCTURE SEMICONDUCTRICE OPTOELECTRONIQUE A NANOFILS ET PROCEDE DE FABRICATION D'UNE TELLE STRUCTURE
Publication
Application
Priority
- FR 1253011 A 20120402
- EP 2013056816 W 20130329
Abstract (en)
[origin: US2013256689A1] The invention concerns an optoelectronic semiconductor structure (100) including a semiconductor substrate (110) including a first face (111), a nucleation layer (120) and a nanowire (160) in contact with the nucleation layer. The nucleation layer (120) covers a portion of the first face (111) which is called the "nucleation" face, and where the portion (114) of the first face (111) not covered by the nucleation layer (120) is called the "free" portion. The structure also includes a conducting layer (141) in contact with the free portion (114) of the substrate (110), where the said conducting layer is also in contact with the nanowire over the perimeter of the nanowire (160). The invention also concerns a method of manufacture of such a structure (100).
IPC 8 full level
B82Y 10/00 (2011.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01); B82Y 99/00 (2011.01); H01L 31/0224 (2006.01); H01L 31/0352 (2006.01); H01L 33/00 (2010.01); H01L 33/04 (2010.01); H01L 33/08 (2010.01); H01L 33/18 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/46 (2010.01)
CPC (source: EP US)
B82Y 20/00 (2013.01 - EP US); H01L 31/022408 (2013.01 - US); H01L 31/022425 (2013.01 - EP US); H01L 31/035227 (2013.01 - EP US); H01L 31/035236 (2013.01 - EP US); H01L 31/03529 (2013.01 - EP US); H01L 33/18 (2013.01 - EP US); H01L 33/385 (2013.01 - EP US); H01L 33/40 (2013.01 - EP US); B82Y 40/00 (2013.01 - EP US); H01L 33/007 (2013.01 - EP US); H01L 33/08 (2013.01 - EP US); H01L 33/24 (2013.01 - EP US); H01L 33/32 (2013.01 - EP US); H01L 33/46 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US); Y02E 10/50 (2013.01 - US)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
US 2013256689 A1 20131003; CN 104203807 A 20141210; CN 104203807 B 20170825; EP 2834189 A1 20150211; EP 2834189 B1 20210728; FR 2988904 A1 20131004; FR 2988904 B1 20150116; JP 2015519726 A 20150709; JP 6223420 B2 20171101; WO 2013149964 A1 20131010
DOCDB simple family (application)
US 201313851517 A 20130327; CN 201380018641 A 20130329; EP 13713439 A 20130329; EP 2013056816 W 20130329; FR 1253011 A 20120402; JP 2015503839 A 20130329