EP 2835828 A4 20151202 - SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATION METHOD
Title (en)
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATION METHOD
Title (de)
HALBLEITERBAUELEMENT UND HALBLEITERBAUELEMENTHERSTELLUNGSVERFAHREN
Title (fr)
DISPOSITIF À SEMI-CONDUCTEURS ET PROCÉDÉ DE FABRICATION D'UN DISPOSITIF À SEMI-CONDUCTEURS
Publication
Application
Priority
- JP 2012246017 A 20121108
- JP 2013213270 A 20131011
- JP 2013080301 W 20131108
Abstract (en)
[origin: EP2835828A1] A protective diode (101) has a basic structure (103) including an n + layer (11), an n- layer (10), a p + layer (12), and an n - layer (10) in this order. A p-type layer forming the protective diode (101) is the p + layer (12) with high impurity concentration. Therefore, the spreading of a depletion layer is suppressed and it is possible to reduce the area of the protective diode (101). In addition, phosphorus ions with a large diffusion coefficient are implanted to form the n - layer (10) with low impurity concentration in the polysilicon layer (9) forming the protective diode (101). A heat treatment is performed at a temperature of 1000°C or higher to diffuse the phosphorus ions implanted into the polysilicon layer (9). Therefore, the impurity profile of the n - layer (10) in the depth direction can be uniformized in the depth direction. As a result, a pn junction surface between the p + layer (12) with high impurity concentration and the n - layer (10) with low impurity concentration is substantially perpendicular to the main surface of the substrate and it is possible to suppress the concentration of the electric field on the pn junction between the p + layer (12) and the n - layer (10).
IPC 8 full level
H01L 21/329 (2006.01); H01L 21/822 (2006.01); H01L 27/04 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 29/866 (2006.01); H01L 29/868 (2006.01)
CPC (source: EP US)
H01L 29/0619 (2013.01 - EP US); H01L 29/402 (2013.01 - EP US); H01L 29/66712 (2013.01 - EP US); H01L 29/7395 (2013.01 - EP US); H01L 29/7808 (2013.01 - EP US); H01L 29/7811 (2013.01 - EP US); H01L 29/0692 (2013.01 - EP US); H01L 29/0696 (2013.01 - EP US); H01L 29/66106 (2013.01 - EP US); H01L 29/66121 (2013.01 - EP US); H01L 29/861 (2013.01 - EP US)
Citation (search report)
- [XDAYI] JP 2002043574 A 20020208 - SANYO ELECTRIC CO
- [XAYI] CN 102412248 A 20120411 - JIANGSU DONGGUANG MICRO ELECTRONICS CO LTD
- [XAYI] EP 0680089 A1 19951102 - CONS RIC MICROELETTRONICA [IT]
- [A] US 2012049187 A1 20120301 - HARUYAMA MASAMITSU [JP], et al
- [A] JP 2006093505 A 20060406 - SANYO ELECTRIC CO
- See references of WO 2014073656A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
EP 2835828 A1 20150211; EP 2835828 A4 20151202; EP 2835828 B1 20200108; CN 104321871 A 20150128; CN 104321871 B 20171010; JP 5867623 B2 20160224; JP WO2014073656 A1 20160908; US 2015048450 A1 20150219; US 9368613 B2 20160614; WO 2014073656 A1 20140515
DOCDB simple family (application)
EP 13852697 A 20131108; CN 201380025572 A 20131108; JP 2013080301 W 20131108; JP 2014545776 A 20131108; US 201414531326 A 20141103