EP 2839504 A1 20150225 - FORMULATIONS COMPRISING AMMONIACAL HYDROXO-ZINC COMPOUNDS
Title (en)
FORMULATIONS COMPRISING AMMONIACAL HYDROXO-ZINC COMPOUNDS
Title (de)
FORMULIERUNGEN ENTHALTEND AMMONIAKALISCHE HYDROXO-ZINK-VERBINDUNGEN
Title (fr)
FORMULATION CONTENANT DES COMPOSÉS AMMONIACAUX D'HYDROXO-ZINC
Publication
Application
Priority
- DE 102012206234 A 20120417
- EP 2013056341 W 20130326
Abstract (en)
[origin: WO2013156274A1] The invention relates to ammoniacal formulations comprising a) at least one hydroxo-zinc compound and b) at least one compound of an element of the 3rd primary group, to the use thereof, to a method using said formulations to produce layers comprising ZnO and to electronic components produced using same.
IPC 8 full level
H01L 21/36 (2006.01)
CPC (source: CN EP RU US)
C01C 1/00 (2013.01 - RU); C01G 9/02 (2013.01 - RU); C23C 18/1216 (2013.01 - RU); H01B 1/06 (2013.01 - EP US); H01B 1/22 (2013.01 - EP US); H01L 21/02554 (2013.01 - CN EP RU US); H01L 21/02565 (2013.01 - CN EP RU US); H01L 21/02628 (2013.01 - CN EP RU US); H01L 21/34 (2013.01 - RU); H01L 29/24 (2013.01 - US); H01L 29/7869 (2013.01 - US)
Citation (search report)
See references of WO 2013156274A1
Citation (examination)
- JAECHUL PARK ET AL: "Source/Drain Series-Resistance Effects in Amorphous Gallium-Indium Zinc-Oxide Thin Film Transistors", IEEE ELECTRON DEVICE LETTERS, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 29, no. 8, 1 August 2008 (2008-08-01), pages 879 - 881, XP011231703, ISSN: 0741-3106, DOI: 10.1109/LED.2008.2000815
- TAEHWAN JUN ET AL: "Bias stress stable aqueous solution derived Y-doped ZnO thin film transistors", JOURNAL OF MATERIALS CHEMISTRY, ROYAL SOCIETY OF CHEMISTRY, GB, vol. 21, no. 35, 1 January 2011 (2011-01-01), pages 13524 - 13529, XP009189134, ISSN: 0959-9428, DOI: 10.1039/C1JM11586C
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
DE 102012206234 A1 20131017; CN 104221133 A 20141217; CN 104221133 B 20180306; EP 2839504 A1 20150225; JP 2015522502 A 20150806; JP 6257585 B2 20180110; KR 101993495 B1 20190626; KR 20150010708 A 20150128; RU 2014145777 A 20160610; RU 2640237 C2 20171227; TW 201404724 A 20140201; TW I629245 B 20180711; US 2015076421 A1 20150319; US 9978591 B2 20180522; WO 2013156274 A1 20131024
DOCDB simple family (application)
DE 102012206234 A 20120417; CN 201380020604 A 20130326; EP 13712255 A 20130326; EP 2013056341 W 20130326; JP 2015506162 A 20130326; KR 20147028739 A 20130326; RU 2014145777 A 20130326; TW 102113291 A 20130415; US 201314395339 A 20130326