EP 2847787 A1 20150318 - TWO-STEP METHOD FOR JOINING A SEMICONDUCTOR TO A SUBSTRATE WITH CONNECTING MATERIAL BASED ON SILVER
Title (en)
TWO-STEP METHOD FOR JOINING A SEMICONDUCTOR TO A SUBSTRATE WITH CONNECTING MATERIAL BASED ON SILVER
Title (de)
ZWEISTUFIGES VERFAHREN ZUM FÜGEN EINES HALBLEITERS AUF EIN SUBSTRAT MIT VERBINDUNGSMATERIAL AUF SILBERBASIS
Title (fr)
PROCÉDÉ À DEUX NIVEAUX POUR ASSEMBLER UN SEMI-CONDUCTEUR SUR UN SUBSTRAT AVEC UN MATÉRIAU DE L'IAISON À BASE D'ARGENT
Publication
Application
Priority
- DE 102012207652 A 20120508
- EP 2013056951 W 20130402
Abstract (en)
[origin: WO2013167321A1] The invention relates to a method for joining a semiconductor (20) to a substrate (10), comprising the following steps: . applying a first paste layer (1) of a sintering paste to the substrate; . heating and compressing the first paste layer to form a first sintered layer; . applying a second paste layer (2) of a sintering paste to the first sintered layer and arranging a semiconductor (20) on the second paste layer; . heating and compressing the second paste layer (2) to form a second sintered layer. The invention further relates to a semiconductor component produced by means of the method.
IPC 8 full level
H01L 21/60 (2006.01)
CPC (source: EP US)
H01L 24/27 (2013.01 - EP US); H01L 24/29 (2013.01 - EP US); H01L 24/32 (2013.01 - EP US); H01L 24/83 (2013.01 - EP US); H01L 2224/2731 (2013.01 - US); H01L 2224/2732 (2013.01 - EP US); H01L 2224/27442 (2013.01 - EP US); H01L 2224/27505 (2013.01 - EP US); H01L 2224/27901 (2013.01 - EP US); H01L 2224/29082 (2013.01 - EP US); H01L 2224/29083 (2013.01 - EP US); H01L 2224/29339 (2013.01 - EP US); H01L 2224/3201 (2013.01 - EP); H01L 2224/32014 (2013.01 - EP); H01L 2224/32225 (2013.01 - US); H01L 2224/75315 (2013.01 - EP US); H01L 2224/831 (2013.01 - US); H01L 2224/83192 (2013.01 - EP US); H01L 2224/83203 (2013.01 - US); H01L 2224/83208 (2013.01 - EP US); H01L 2224/8384 (2013.01 - EP US); H01L 2924/01047 (2013.01 - US); H01L 2924/1301 (2013.01 - EP US); H01L 2924/1305 (2013.01 - EP US); H01L 2924/13055 (2013.01 - EP US); H01L 2924/13062 (2013.01 - EP US); H01L 2924/13091 (2013.01 - EP US); H01L 2924/15747 (2013.01 - EP US); H01L 2924/201 (2013.01 - US); H01L 2924/20101 (2013.01 - US); H01L 2924/20102 (2013.01 - US); H01L 2924/20103 (2013.01 - US); H01L 2924/20104 (2013.01 - US); H01L 2924/20105 (2013.01 - US); H01L 2924/20106 (2013.01 - US); H01L 2924/20107 (2013.01 - US); H01L 2924/20108 (2013.01 - US); H01L 2924/20109 (2013.01 - US); H01L 2924/2011 (2013.01 - US); H01L 2924/20111 (2013.01 - US)
Citation (search report)
See references of WO 2013167321A1
Citation (examination)
- JP 2008311371 A 20081225 - DENSO CORP
- EP 2425920 A1 20120307 - HERAEUS MATERIALS TECH GMBH [DE]
- CHRISTIAN MERTENS ED - MERTENS CHRISTIAN: "Die Niedertemperatur-Verbindungstechnik der Leistungselektronik", 1 January 2004, DIE NIEDERTEMPERATUR-VERBINDUNGSTECHNIK DER LEISTUNGSELEKTRONIK (BOOK SERIES: FORTSCHRITT-BERICHTE VDI); [FORTSCHRITT-BERICHTE VDI : REIHE 21, ELEKTROTECHNIK ; 365], VDI VERLAG, DÜSSELDORF, GERMANY, PAGE(S) 1 - 35, 72, ISBN: 978-3-18-336521-0, XP002541611
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2013167321 A1 20131114; DE 102012207652 A1 20131114; EP 2847787 A1 20150318; US 2015123263 A1 20150507
DOCDB simple family (application)
EP 2013056951 W 20130402; DE 102012207652 A 20120508; EP 13715652 A 20130402; US 201314400121 A 20130402