Global Patent Index - EP 2852979 A1

EP 2852979 A1 20150401 - A HIGH ELECTRON MOBILITY FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

Title (en)

A HIGH ELECTRON MOBILITY FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

Title (de)

FELDEFFEKTTRANSISTOR MIT HOHER ELEKTRONENMOBILITÄT UND VERFAHREN ZUR HERSTELLUNG DAVON

Title (fr)

TRANSISTOR À EFFET DE CHAMP À HAUTE MOBILITÉ ÉLECTRONIQUE ET PROCÉDÉ DE FABRICATION ASSOCIÉ

Publication

EP 2852979 A1 20150401 (EN)

Application

EP 13793952 A 20130509

Priority

  • US 201213478402 A 20120523
  • US 201213478609 A 20120523
  • US 201213479018 A 20120523
  • US 2013040441 W 20130509

Abstract (en)

[origin: WO2013176905A1] A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.

IPC 8 full level

H01L 29/778 (2006.01); H01L 21/336 (2006.01); H01L 29/34 (2006.01); H01L 21/311 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01)

CPC (source: EP)

H01L 29/34 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 21/31144 (2013.01); H01L 29/2003 (2013.01); H01L 29/4236 (2013.01)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

WO 2013176905 A1 20131128; WO 2013176905 A4 20140123; CN 105103296 A 20151125; CN 105103296 B 20180828; EP 2852979 A1 20150401; EP 2852979 A4 20151118

DOCDB simple family (application)

US 2013040441 W 20130509; CN 201380024745 A 20130509; EP 13793952 A 20130509