EP 2852979 A1 20150401 - A HIGH ELECTRON MOBILITY FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
Title (en)
A HIGH ELECTRON MOBILITY FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
Title (de)
FELDEFFEKTTRANSISTOR MIT HOHER ELEKTRONENMOBILITÄT UND VERFAHREN ZUR HERSTELLUNG DAVON
Title (fr)
TRANSISTOR À EFFET DE CHAMP À HAUTE MOBILITÉ ÉLECTRONIQUE ET PROCÉDÉ DE FABRICATION ASSOCIÉ
Publication
Application
Priority
- US 201213478402 A 20120523
- US 201213478609 A 20120523
- US 201213479018 A 20120523
- US 2013040441 W 20130509
Abstract (en)
[origin: WO2013176905A1] A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.
IPC 8 full level
H01L 29/778 (2006.01); H01L 21/336 (2006.01); H01L 29/34 (2006.01); H01L 21/311 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01)
CPC (source: EP)
H01L 29/34 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 21/31144 (2013.01); H01L 29/2003 (2013.01); H01L 29/4236 (2013.01)
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2013176905 A1 20131128; WO 2013176905 A4 20140123; CN 105103296 A 20151125; CN 105103296 B 20180828; EP 2852979 A1 20150401; EP 2852979 A4 20151118
DOCDB simple family (application)
US 2013040441 W 20130509; CN 201380024745 A 20130509; EP 13793952 A 20130509