Global Patent Index - EP 2869303 A4

EP 2869303 A4 20151202 - NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE

Title (en)

NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE

Title (de)

NICHTFLÜCHTIGER HALBLEITERSPEICHER

Title (fr)

DISPOSITIF DE STOCKAGE NON VOLATIL À SEMI-CONDUCTEURS

Publication

EP 2869303 A4 20151202 (EN)

Application

EP 13810694 A 20130621

Priority

  • JP 2012146954 A 20120629
  • JP 2013067146 W 20130621

Abstract (en)

[origin: EP2869303A1] Proposed is a non-volatile semiconductor storage device with which, while effecting miniaturization, it is possible to suppress a disturb occurrence better than before. In a non-volatile semiconductor storage device, forming a plurality of words in a matrix, disposing a power source unit for each word line column (memory well), imparting a different unit voltage to each power source unit corresponding to whether a selected memory well is present in a given word line column, switching on a word line unit basis a switch mechanism of each power source unit according to a control line voltage value, and individually imparting to each word line either a charge storage gate voltage or a charge storage interdiction gate voltage, it is possible to freely set for each word line column a charge storage interdiction gate voltage value or a bit line voltage value which is capable of suppressing a disturb occurrence. A plurality of power source units are connected to a common control line in the row direction, obviating the need for a separate address decoder for each word column line, and allowing effecting miniaturization.

IPC 8 full level

G11C 16/06 (2006.01); G11C 16/02 (2006.01); G11C 16/08 (2006.01)

CPC (source: EP KR US)

G11C 16/0408 (2013.01 - KR US); G11C 16/0466 (2013.01 - EP KR US); G11C 16/0483 (2013.01 - KR); G11C 16/08 (2013.01 - EP KR US); G11C 16/12 (2013.01 - EP KR US); G11C 16/24 (2013.01 - KR US); G11C 16/30 (2013.01 - KR US); G11C 5/025 (2013.01 - US); G11C 5/06 (2013.01 - US); G11C 5/063 (2013.01 - US); G11C 16/04 (2013.01 - US)

Citation (search report)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DOCDB simple family (publication)

EP 2869303 A1 20150506; EP 2869303 A4 20151202; EP 2869303 B1 20210303; CN 104380387 A 20150225; CN 104380387 B 20170613; JP 2014010866 A 20140120; JP 5908803 B2 20160426; KR 101643108 B1 20160726; KR 20150027261 A 20150311; SG 11201408686Q A 20150330; TW 201415466 A 20140416; TW I616883 B 20180301; US 2015318048 A1 20151105; US 9343166 B2 20160517; WO 2014002913 A1 20140103

DOCDB simple family (application)

EP 13810694 A 20130621; CN 201380033347 A 20130621; JP 2012146954 A 20120629; JP 2013067146 W 20130621; KR 20157002203 A 20130621; SG 11201408686Q A 20130621; TW 102122903 A 20130627; US 201314410380 A 20130621