EP 2870627 A1 20150513 - DETACHMENT OF A SELF-SUPPORTING LAYER OF SILICON<100>
Title (en)
DETACHMENT OF A SELF-SUPPORTING LAYER OF SILICON<100>
Title (de)
ABLÖSUNG EINER SELBSTTRAGENDEN SCHICHT AUS SILICIUM<100>
Title (fr)
DÉTACHEMENT D'UNE COUCHE AUTOPORTÉE DE SILICIUM<100>
Publication
Application
Priority
- FR 1256340 A 20120703
- FR 2013051544 W 20130701
Abstract (en)
[origin: WO2014006316A1] A method for detaching a self-supporting layer (4) of silicon crystalline orientation <100>, with a view, in particular, to applications in the photovoltaic field, characterised in that the method comprises the steps consisting of: a) Implanting ionic species in a substrate (1) of silicon crystalline orientation <100> so as to create a plane of weakness (2) in the implanted substrate (1), delimiting, on either side, a self-supporting layer (4) and a negative (5) of the substrate (1), and b) Applying a heat treatment to the implanted substrate (1) with a temperature ramp greater than 30°C/sec. so as to detach the self-supporting layer (4) of silicon.
IPC 8 full level
H01L 31/18 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/762 (2006.01); H01L 31/04 (2014.01)
CPC (source: CN EP KR US)
H01L 21/265 (2013.01 - US); H01L 21/324 (2013.01 - US); H01L 21/76254 (2013.01 - CN EP KR US); H01L 31/04 (2013.01 - US); H01L 31/1892 (2013.01 - CN EP KR US); Y02E 10/50 (2013.01 - EP US)
Citation (search report)
See references of WO 2014006316A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
Designated extension state (EPC)
BA ME
DOCDB simple family (publication)
WO 2014006316 A1 20140109; CN 104428886 A 20150318; CN 104428886 B 20180427; EP 2870627 A1 20150513; EP 2870627 B1 20171108; FR 2993095 A1 20140110; FR 2993095 B1 20140808; JP 2015522511 A 20150806; JP 6246198 B2 20171213; KR 20150030740 A 20150320; SG 11201500009P A 20150227; US 2015194550 A1 20150709; US 9698289 B2 20170704
DOCDB simple family (application)
FR 2013051544 W 20130701; CN 201380035973 A 20130701; EP 13739766 A 20130701; FR 1256340 A 20120703; JP 2015519305 A 20130701; KR 20157001816 A 20130701; SG 11201500009P A 20130701; US 201314412874 A 20130701