EP 2878007 A4 20160302 - SELF-ALIGNED 3-D EPITAXIAL STRUCTURES FOR MOS DEVICE FABRICATION
Title (en)
SELF-ALIGNED 3-D EPITAXIAL STRUCTURES FOR MOS DEVICE FABRICATION
Title (de)
SELBSTAUSRICHTENDE EPITAKTISCHE 3D-STRUKTUREN FÜR DIE HERSTELLUNG VON MOS-VORRICHTUNGEN
Title (fr)
STRUCTURES ÉPITAXIALES 3D AUTO-ALIGNÉES POUR FABRICATION DE DISPOSITIF MOS
Publication
Application
Priority
- US 201213560513 A 20120727
- US 2013045471 W 20130612
Abstract (en)
[origin: US2014027860A1] Techniques are disclosed for customization of fin-based transistor devices to provide a diverse range of channel configurations and/or material systems within the same integrated circuit die. In accordance with one example embodiment, sacrificial fins are removed and replaced with custom semiconductor material of arbitrary composition and strain suitable for a given application. In one such case, each of a first set of the sacrificial fins is recessed or otherwise removed and replaced with a p-type material, and each of a second set of the sacrificial fins is recessed or otherwise removed and replaced with an n-type material. The p-type material can be completely independent of the process for the n-type material, and vice-versa. Numerous other circuit configurations and device variations are enabled using the techniques provided herein.
IPC 8 full level
H01L 21/336 (2006.01); H01L 21/8238 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01)
CPC (source: CN EP KR US)
H01L 21/32 (2013.01 - KR); H01L 21/823807 (2013.01 - CN EP US); H01L 21/823814 (2013.01 - CN EP US); H01L 21/823821 (2013.01 - CN EP US); H01L 21/8258 (2013.01 - EP US); H01L 29/1054 (2013.01 - CN EP US); H01L 29/78 (2013.01 - KR)
Citation (search report)
- [XY] US 2004262687 A1 20041230 - JUNG IN-SOO [KR], et al
- [XYI] US 2007122954 A1 20070531 - LIU TSU-JAE K [US], et al
- [XI] US 2011180847 A1 20110728 - IKEDA KEIJI [JP], et al
- [XI] US 2010163842 A1 20100701 - LAI LI-SHYUE [TW], et al
- [X] US 2010301390 A1 20101202 - KO CHIH-HSIN [TW], et al
- [X] EP 2315239 A1 20110427 - IMEC [BE], et al
- [XI] US 2011241084 A1 20111006 - WU ZHIQIANG [TW], et al
- [A] US 2009057846 A1 20090305 - DOYLE BRIAN S [US], et al
- [E] EP 2741320 A1 20140611 - IMEC [BE]
- See references of WO 2014018182A1
Designated contracting state (EPC)
AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
DOCDB simple family (publication)
US 2014027860 A1 20140130; US 9728464 B2 20170808; CN 104380443 A 20150225; EP 2878007 A1 20150603; EP 2878007 A4 20160302; KR 101712972 B1 20170307; KR 102058000 B1 20191220; KR 20150005705 A 20150114; KR 20160130524 A 20161111; TW 201417189 A 20140501; TW 201626466 A 20160716; TW I517264 B 20160111; TW I564968 B 20170101; US 11171058 B2 20211109; US 2018019170 A1 20180118; US 2022028747 A1 20220127; WO 2014018182 A1 20140130
DOCDB simple family (application)
US 201213560513 A 20120727; CN 201380033495 A 20130612; EP 13822511 A 20130612; KR 20147034051 A 20130612; KR 20167030458 A 20130612; TW 102125208 A 20130715; TW 104138558 A 20130715; US 2013045471 W 20130612; US 201715668288 A 20170803; US 202117495696 A 20211006